Transient effects controlling the charge carrier population of organic field effect transistor channels Integration of reduced graphene oxide into organic field-effect transistors as conducting electrodes and as a metal modification layer Appl. Phys. Lett. 95, 023304 (2009); 10.1063/1.3176216Probing carrier injection into pentacene field effect transistor by time-resolved microscopic optical second harmonic generation measurement

We developed an apparatus for producing high-density hydrogen plasma. We confirmed that the temperatures of transition-metal films increased to above 800˚C within 5 s when they were exposed to hydrogen plasma formed using the apparatus. We applied this phenomenon to the selective heat treatment of W/Ni films deposited on n + 4H-SiC wafers and formed nickel silicide electrodes. To utilize this method, we can perform the nickel silicidation process without heating the other areas such as channel regions and improve the reliability.