2009
DOI: 10.1063/1.3275805
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Molecular structure and carrier distributions at semiconductor/dielectric interfaces in organic field-effect transistors studied with sum frequency generation microscopy

Abstract: Transient effects controlling the charge carrier population of organic field effect transistor channels Integration of reduced graphene oxide into organic field-effect transistors as conducting electrodes and as a metal modification layer Appl. Phys. Lett. 95, 023304 (2009); 10.1063/1.3176216Probing carrier injection into pentacene field effect transistor by time-resolved microscopic optical second harmonic generation measurement

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Cited by 25 publications
(41 citation statements)
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“…An example is shown in Figure 5. The spatial resolution in wide-field SFG can be as high as 2 μ m (8991), which is much higher than what can be obtained in linear IR microscopy. The higher resolution is a direct consequence of the nonlinear upconversion of an initial IR excitation to a signal in the visible range of the spectrum.…”
Section: Second-order Vibrational Microscopymentioning
confidence: 78%
“…An example is shown in Figure 5. The spatial resolution in wide-field SFG can be as high as 2 μ m (8991), which is much higher than what can be obtained in linear IR microscopy. The higher resolution is a direct consequence of the nonlinear upconversion of an initial IR excitation to a signal in the visible range of the spectrum.…”
Section: Second-order Vibrational Microscopymentioning
confidence: 78%
“…9-11 IR-visible SFG spectroscopy has also been applied to OFETs to probe the molecular structural changes and charge accumulation processes caused by injected charges. [12][13][14][15][16] In this letter, multilayer OLED devices were investigated by EFI-DR-SFG. Buried layers were probed by applying a bias voltage to multilayer OLED devices during measurements of the SFG under the doubly resonant condition.…”
mentioning
confidence: 99%
“…This observation must be due to the doubleresonance effect, because the output SFG wavelength (in this work, x SFG ¼ x VIS þ x IR % 430 nm) is at the absorption edge of Alq 3 . When a static electric field E 0 is applied to the system, the SFG signal intensity (I SFG ) is given by [7][8][9][10][11][12][13][14][15][16] …”
mentioning
confidence: 99%
“…36 This problem is amplified for low repetition-rate lasers with high pulse energies, since here the single-shot SFG signal should be maximized to avoid extremely long image acquisition times. 34 Here, wide-field SFG microscopy 34,35,54,55 as schematically shown in Fig. 4d presents itself as a complementary approach that solves most of these problems.…”
mentioning
confidence: 99%