has been expanded in the recent years owing to the unique properties of organic materials, such as biodegradability [11,12] and stretchability. [13][14][15] This allows for easier access to useful unobtained information that has not been extracted by conventional silicon technology. Flexible electronic devices often require integrated circuits (ICs) for signal processing; thus, the development of flexible ICs is crucial in the practical applications of flexible electric devices.Organic thin-film transistors (OTFTs) are attractive candidates in the development of flexible ICs because they can be fabricated on flexible, and even stretchable substrates, with low-cost and largearea fabrication processes. [16][17][18] Their individual electric properties have been analyzed and reported over the past few decades, focusing on threshold voltage (V th ), [19][20][21][22][23][24][25][26][27][28] mobility, [29][30][31] and stability, [32,33] which were primarily controlled or improved by modulating the behavior of charge carriers at the interface between the gate dielectrics and semiconductors. Particularly, V th is one of the key characteristics which affects the performance of the ICs considering that in the early stages the silicon-based ICs was produced using only V th controlled n-channel transistors. [34] Therefore, the V th control using charge-carrier modulation is essential in OTFTs as well as silicon transistors.To maximize the performance metrics of the ICs, for example, the reliability, amplification gain, and operation Flexible electronics have gained considerable attention for application in wearable devices. Organic transistors are potential candidates to develop flexible integrated circuits (ICs). A primary technique for maximizing their reliability, gain, and operation speed is the modulation of charge-carrier behavior in the respective transistors fabricated on the same substrate. In this work, heterogeneous functional dielectric patterns (HFDP) of ultrathin polymer gate dielectrics of poly((±)endo,exo-bicyclo[2.2.1]hept-ene-2,3-dicarboxylic acid, diphenylester) (PNDPE) are introduced. The HFDP that are obtained via the photo-Fries rearrangement by ultraviolet radiation in the homogeneous PNDPE provide a functional area for charge-carrier modulation. This leads to programmable threshold voltage control over a wide range (−1.5 to +0.2 V) in the transistors with a high patterning resolution, at 2 V operational voltage. The transistors also exhibit high operational stability over 140 days and under the bias-stress duration of 1800 s. With the HFDP, the performance metrics of ICs, for example, the noise margin and gain of the zero-V GS load inverters and the oscillation frequency of ring oscillators are improved to 80%, 1200, and 2.5 kHz, respectively, which are the highest among the previously reported zero-V GS -based organic circuits. The HFDP can be applied to much complex and ultraflexible ICs.
