No abstract

No abstract

No abstract

No abstract

Geometrical correction factors are derived for semiconductor resistivity measurements by the four-point probe method on rectangular parallelepipeds. The conformal transformation method leads to the same numerical values as that obtained from the solutions of Poisson's equation in the lower limit of the sample thickness. Some numerical results are given as a function of the width, length, and thickness of the rectangular parallelepiped, the probe separation, and the probe position.