The generation of fluorescence and 3-deoxyglucosone (3DG), browning, polymerization, and impairment of the amino acid residues of lysozyme incubated with glucose were investigated at 37 degrees C and 50 degrees C at pH 7.4 in a phosphate or TAPSO buffer under aerobic and non-aerobic conditions with or without DETAPAC as a chelating reagent. Browning, the generation of fluorescence, and polymerization were accelerated under the non-aerobic, compared to aerobic, conditions. Moreover, the formation of 3DG was also significantly increased under non-aerobic conditions. The incubation of both reaction systems resulted in noticeable losses of arginine and lysine residues. DETAPAC significantly inhibited the advanced Maillard reaction under both aerobic and non-aerobic conditions. However, DETAPAC had no effect on the impairment of lysine and arginine residues. The generation of fluorescence, browning and polymerization of lysozyme in the TAPSO buffer were markedly inhibited under both aerobic and non-aerobic conditions. These observations suggest that transition metals in the phosphate buffer may have accelerated the formation of Amadori compounds via Schiff's base. In addition, under non-aerobic conditions, the formation of advanced glycation end products from 3DG via Amadori compounds is presumed to be the major pathway, because the formation of N epsilon-(carboxymethyl)lysine, glyoxal, and glucosone was accelerated by an oxidative reaction catalyzed with transition metal ions. These presumptions are supported by the results from a lysozyme-3DG reaction system.

Through terahertz time-domain spectroscopy, negative imaginary conductivity is observed in In-rich AlInN film grown by metal-organic chemical-vapor deposition for frequencies from 0.2 to 2.0 THz. This non-Drude behavior is explained based on the electron back-scattering theory of Smith [Phys. Rev. B65, 115206 (2002)]. Comparing with binary semiconductor InN, potential fluctuations produced by composition inhomogeneity and alloy scattering of carriers make In-rich AlInN alloy easier to be subjected to non-Drude behavior in electrical performance.

Indium-rich AlInN are grown by metal-organic(MO) chemical vapor deposition using trimethylaluminum, trimethylindium, and ammonia. Under the conservation of MO influx, the effects of gas flow in the MO route on AlInN growth and Al-related parasitic reaction are investigated. With an increase in this gas flow, the suppression of Al-related parasitic reaction, i.e., enhancement in Al content incorporation and improvement of crystalline quality, is satisfactorily shown until the occurring of severe phase separation. Accordingly, Al content x in AlxIn1−xN can be tuned from x=0.02 to 0.26. The Raman spectra of those AlInN samples with phase separation are analyzed by the resonant excitation effect and two-mode behavior for A1(LO). Finally, we propose a phase diagram to interpret the phase separation and Al content evolution under the influence of gas flow

Through terahertz time-domain spectroscopy, negative imaginary conductivity is observed in In-rich AlInN film grown by metal-organic chemical vapor deposition for frequencies from 0.2 to 2.0 THz. This non-Drude behavior is explained based on the electron back scattering theory of N. V. Smith. Comparing with binary semiconductor InN, potential fluctuations produced by composition inhomogeneity and alloy scattering of carriers make In-rich AlInN alloy easier subjected to non-Drude behavior in electrical performance.

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