In this paper, a new voltage mirror circuit by using carbon nanotubes (CNTs) technology is presented. This circuit is specifically proposed for the application of duplicating multiple-valued and fuzzy dynamic random access memories. The given structure prevents any voltage drop for the capacitor inside the memory cell. As a result, any fanout circuit can be driven. The new structure can be utilised for different multiple-valued logic systems without a change. The unique characteristics of carbon nanotube field effect transistor (CNFET) technology are exploited in this paper to meet the desired design goals. It demonstrates the potentials of CNFET technology in a realistic very largescale integration application. The proposed design is highly tolerant to D CNT variation and it is also immune to misaligned CNTs. Simulation results demonstrate that it provides sufficient driving capability with reasonable accuracy.

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This paper deals with the bridge-style circuits. They are highly efficient in terms of transistor density per unit of area. They comply with the conventional CMOS style and form a full-swing and robust structure. First, we clarify the necessary conditions under which a Boolean function can be implemented fully symmetrical. Then, it is demonstrated that it is possible to design 2 2 n ¡ 1 out of 2 2 n functions fully symmetrical. Eventually, we show how the pull-up and pull-down networks are constructed in a bridge circuit for any three-input function which fulfils the conditions of being implemented fully symmetrical.