An efficient terahertz (THz) photoconductive antenna (PCA), as a major constituent for the generation or detection of THz waves, plays an essential role in bridging microwave-to-photonic gaps. Here, we propose an impressive approach comprising the use of arrayed zinc oxide nanorods (ZnO NRs) as an optical nanoantenna over an anti-reflective layer (silicon nitride) in the antenna gap to boost the photocurrent and consequently the THz signal. The numerical approach applied in investigating the optical behavior of the structure, demonstrates a significant field enhancement within the LT-GaAs layer due to the optical antenna performing simultaneously as a concentrator and an antireflector which behaves as a graded-refractive index layer. ZnO NRs have been fabricated on the PCA gap using the hydrothermal method as a simple, low cost and production compatible fabrication method compared to other complex methods used for the optical nanoantennas. Compared to the conventional PCA with a traditional antireflection coating, the measured THz power by time domain spectroscopy (TDS) is increased more than 4 times on average over the 0.1–1.2 THz range.

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The rise of low-temperature atomic layer deposition (ALD) has made it very attractive to produce high-κ dielectric for flexible electronic devices. Similarly, selective deposition of ALD films is of great relevance for circuitry. We demonstrated a simple method of using a physical mask to block the film’s growth in selected polymeric and flexible substrate areas during a low-pressure ALD process. A low-cost silicone adhesive polyimide tape was used to manually mask selected areas of bare substrates and aluminum strips deposited by evaporation. 190 cycles of aluminum oxide (Al2O3) and hafnium oxide (HfO2) were deposited at temperatures ranging from 100 to 250 °C. Using x-ray photoelectron spectroscopy (XPS) analysis and energy dispersive x-ray spectroscopy (EDS), we showed that the mask was effective in protecting the areas under the tape. The mask did not show any modification of shape for an exposure of 10 h at 250 °C, hence keeping the form of the masked area intact. An analysis of the unmasked area by ellipsometry (632.8 nm) and x ray shows a regular film with a thickness variation under 2 nm for a given temperature and constant refractive index. EDS, selected-area XPS, and imaging XPS show an evident change of elemental content at the interface of two areas. By XPS, we established that the structure of the films was not affected by the mask, the films were stoichiometric, and there was no effect of outgassing from the adhesive film.