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The spatially resolved photoelectric response of a single axial GaAs nanowire pn-diode has been investigated with scanning photocurrent and Kelvin probe force microscopy. Optical generation of carriers at the pn-junction has been shown to dominate the photoresponse. A photocurrent of 88 pA, an open circuit voltage of 0.56 V and a fill factor of 69% were obtained under AM 1.5 G conditions. The photocurrent followed the increasing photoexcitation with 0.24 A/W up to an illumination density of at least 90 W/cm 2 , which is important for potential applications in concentrator solar cells.

The excitonic fine structure of silicon nanoparticles is investigated by time-resolved and magnetic-field-dependent photoluminescence. The results are analyzed using the common model of an excitonic fine structure consisting of a bright and a dark exciton. We find that the radiative recombination rates of both excitons differ only by a factor of eight. Therefore, we observe a thermal crossover in the character of the emission from bright-exciton-like to dark-exciton-like. The validity of our model is further supported by magnetic-field-dependent measurements, in which effects of state mixing are observed.

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