Spatially resolved photoelectric performance of axial GaAs nanowire pn-diodes

Lysov, Andrey; Vinaji, Sasa; Offer, Matthias; Gutsche, Christoph; Regolin, I.; Mertin, W.; Geller, M.; Prost, W.; Bacher, G.; Tegude, F.‐J.

doi:10.1007/s12274-011-0155-4

Cited by 32 publications

(36 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…From the literature, one can find the electron mobility (µ) of GaAs NW around 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 9 4000 cm 2 V -1 s -1 and electron lifetime (τ) in the order of 10 2 ps, [29][30][31][32][33] resulting in an electron diffusion length around 1 µm as estimated by equation (µτkT/e) 1/2 (where kT/e is constant), that is in a good agreement with the electron beam induced current (EBIC) and Kelvin probe force microscopy (KPFM) measurements. 34,35 All these are completely consistent with our results presented in Figure 2d, in which the photovoltaic performance statistics (based on 100 single NW devices) explicitly show that the high efficiency and large J SC are only obtained for the channel length <1 µm. The channel length dependent V OC and FF are given in Supporting Information Figure S3.…”

Section: Resultssupporting

confidence: 90%

High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics

Han

Yang

Wang

et al. 2015

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

Among many available photovoltaic technologies at present, gallium arsenide (GaAs) is one of the recognized leaders for performance and reliability; however, it is still a great challenge to achieve cost-effective GaAs solar cells for smart systems such as transparent and flexible photovoltaics. In this study, highly crystalline long GaAs nanowires (NWs) with minimal crystal defects are synthesized economically by chemical vapor deposition and configured into novel Schottky photovoltaic structures by simply using asymmetric Au-Al contacts. Without any doping profiles such as p-n junction and complicated coaxial junction structures, the single NW Schottky device shows a record high apparent energy conversion efficiency of 16% under air mass 1.5 global illumination by normalizing to the projection area of the NW. The corresponding photovoltaic output can be further enhanced by connecting individual cells in series and in parallel as well as by fabricating NW array solar cells via contact printing showing an overall efficiency of 1.6%. Importantly, these Schottky cells can be easily integrated on the glass and plastic substrates for transparent and flexible photovoltaics, which explicitly demonstrate the outstanding versatility and promising perspective of these GaAs NW Schottky photovoltaics for next-generation smart solar energy harvesting devices.

show abstract

Section: Resultssupporting

confidence: 90%

High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics

Han

Yang

Wang

et al. 2015

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…This study represents an important advance in fabricating core-shell heterojunction NWs for high-performance optoelectronic applications [29]. Wang et al developed an efficient and highly sensitive broad band UV/VIS photodetector based on wide band gap ZnO/ZnS heterojunction 3D core/shell nanowire array [37]. The abrupt interface between ZnO and ZnS plays a dominant role in photon absorption via an indirect type-II transition which was strongly manifested in the photodetection of visible illumination (blue and green).…”

Section: Photodetectorsmentioning

confidence: 97%

“…In addition, 1-D axial heterojunction is considered to be fabricated more easily than core-shell approaches and expected to exhibit lower leakage currents and, therefore, should possess a superior rectifying behavior compared to radial structures [37]. 1-D axial heterojunctions, based on II-VI compound semiconductor nanostructures, have also caught the eye of investigators and present excellent performance.…”

Section: -D Axial Heterojunctionsmentioning

confidence: 99%

Heterojunctions Based on II-VI Compound Semiconductor One-Dimensional Nanostructures and Their Optoelectronic Applications

Zhang

Geng

2017

Crystals

View full text Add to dashboard Cite

Abstract:Wide band gap II-VI semiconductor nanostructures have been extensively studied according to their great potentials for optoelectronic applications, while heterojunctions are fundamental elements for modern electronic and optoelectronic devices. Subsequently, a great deal of achievements in construction and optoelectronic applications of heterojunctions based on II-VI compound semiconductor one-dimensional nanostructures have been obtained in the past decade. Herein, we present a review of a series of progress in this field. First, construction strategies towards different types of heterojunctions are reviewed, including core-shell heterojunctions, one-dimensional axial heterojunctions, crossed nanowires heterojunctions, and one-dimensional nanostructure/thin film or Si substrate heterojunctions. Secondly, optoelectronic applications of these constructed heterojunctions, such as photodetectors, solar cells, light emitting diodes, junction field effect transistors, etc., are discussed briefly. This review shows that heterojunctions based on II-VI compound semiconductor 1-D nanostructures have great potential for future optoelectronic applications.

show abstract

“…However, using a simple analysis with a projected absorption area equal to the i-region, we achieve similar efficiencies as previously published single-NW devices. 6,30 We plotted the short-circuit current vs. laser power (Fig. 2(b)) and found a linear dependence over five orders of magnitude.…”

mentioning

confidence: 95%

“…4) and GaAs (Ref. 30) devices. The rectifying behavior demonstrates that HCl prevents the overgrowth of a conductive n-type shell.…”

mentioning

confidence: 99%

Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point

Wallentin

Barrutia

Jansson

et al. 2012

Applied Physics Letters

View full text Add to dashboard Cite

Axially defined GaInP single nanowire (NW) p-i-n junctions are demonstrated, with photocurrent response and yellow-green electroluminescence near the indirect bandgap crossover point at 2.18 eV (569 nm). We use DEZn and H2S as p- and n-type dopants, and find that they both affect the material composition and the crystal structure. The photovoltaic efficiency is comparable to single NW devices from binary III-V materials. These results demonstrate the potential of GaInP nanowires as a high-bandgap material for multijunction solar cells and light-emitting devices in the visible regime.

show abstract

Spatially resolved photoelectric performance of axial GaAs nanowire pn-diodes

Cited by 32 publications

References 40 publications

High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics

High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics

Heterojunctions Based on II-VI Compound Semiconductor One-Dimensional Nanostructures and Their Optoelectronic Applications

Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point

Contact Info

Product

Resources

About