Single GaInP nanowire p-i-n junctions near the direct to indirect bandgap crossover point

Wallentin, Jesper; Barrutia, Laura; Jansson, Anna; Mergenthaler, Kilian; Ek, Martin; Jacobsson, Daniel; Wallenberg, L. Reine; Deppert, Knut; Samuelson, Lars; Hessman, Dan; Borgström, Magnus T.

doi:10.1063/1.4729929

Cited by 13 publications

(23 citation statements)

References 32 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Of course, other ternary alloys may be of interest for multi‐junction cells. The growth of some of these ternary compound semiconductor nanowires, most notably InGaP, AlGaAs and GaAsP, has already been demonstrated on Si or other substrates 175–181. As discussed previously, the lattice mismatch between the nanowires and Si is not a concern provided the nanowire–substrate contact area is below the critical diameter for dislocations.…”

Section: Design For High Efficiency Pvmentioning

confidence: 88%

See 1 more Smart Citation

III–V nanowire photovoltaics: Review of design for high efficiency

LaPierre

Chia

Gibson

et al. 2013

Physica Rapid Research Ltrs

224

173

View full text Add to dashboard Cite

1 Introduction Global energy demand is predicted to exceed 30 TW by 2050, about double the present value [1]. This predicament, known as the TeraWatt challenge, and concern over anthropogenic climate change, resource availability ("peak energy") and energy security have all increased the interest in renewable energy (hydroelectric, wind, solar, geothermal and biomass) [2]. One of the most promising renewable energy technologies is solar photovoltaics (PV) which convert sunlight directly into electrical energy. Although the resource potential of PV is enormous, it currently constitutes a small fraction (<1%) of global energy supply [2]. One of the main factors limiting the widespread adoption of PV is its low energy density, low efficiency, and relatively high cost in comparison to other energy technologies. This means that current PV technology can only compete in areas of high insolation or by government incentives such as feed-in tariff programs.One of the most relevant metrics for PV devices is the power conversion efficiency (PCE); that is, the efficiency with which sunlight can be converted to electrical power. A significant effort in PV research today aims to improve PCE while simultaneously reducing (or, at least, not significantly impacting) production cost. The vast majority of

show abstract

Section: Design For High Efficiency Pvmentioning

confidence: 88%

“…Recently, another model was proposed whereby dopants cause nucleation‐limited growth 163. Finally, doping can affect the composition of ternary III–V alloys 164. A review on nanowire doping is provided in Ref.…”

Section: Dopingmentioning

confidence: 99%

III–V nanowire photovoltaics: Review of design for high efficiency

LaPierre

Chia

Gibson

et al. 2013

Physica Rapid Research Ltrs

224

173

View full text Add to dashboard Cite

show abstract

“…112 Most interestingly, doping may also modify the compositions for ternary semiconductor NW. Wallentin et al 113 reported the growth of GaxIn(1-x)P NWs with p-i-n radial junction. They found that the S doped region is slightly more In rich (x=0.7)…”

Section: And the Elimination Ofmentioning

confidence: 99%

Progress in doping semiconductor nanowires during growth

Dayeh

Chen

et al. 2017

Materials Science in Semiconductor Processing

View full text Add to dashboard Cite

The anisotropic growth of one-dimensional or filamental crystals in the form of microwires and nanowires constitutes a rich domain of epitaxy and newly enabled applications at different length and size scales. Significant progress has been accomplished in controlling the growth, morphology, and properties of semiconductor nanowires and consequently their device level performance. The objective of this review is two-fold: to highlight progress up to date in nanowire doping and to discuss the remaining fundamental challenges. We focus on the most common semiconductor nanowire growth mechanism, the vapor-liquid-solid growth, and the perturbation of its kinetic and thermodynamic aspects with the introduction of dopants. We survey the origins of dopant gradients in nanowire growth and summarize quantification techniques for dopants and free-carrier concentrations.We analyze the morphological changes due to dopants and the influence of growth droplet seeds on composition and morphology and review growth aspects and alternatives that can mitigate these effects. We then summarize some of the remaining issues pertaining to dopant control in nanowires.

show abstract

“…It has been shown that the (Ga,In)P exhibits a direct-indirect band gap crossover which depends on the In fraction [7][8][9][10]. It is a material largely used in optical applications such as light-emitting devices, solar cells and heterojunction structures [11,8,12].…”

Section: Introductionmentioning

confidence: 99%

“…The MOCVD is a common technique to grow (Ga,In)P nanowires, it is usually a seed assisted growth process [8,11,14,15]. The traditional MOCVD method uses organometallic compounds as precursor source of the elements.…”

Section: Introductionmentioning

confidence: 99%