(Ga,In)P nanowires grown without intentional catalyst

Cerqueira, Carolina F.; Viana, Bartolomeu C.; Luz-Lima, C.; Perea-López, Néstor; Terrones, Mauricio; Falcão, Eduardo H.L.; Gomes, Anderson S. L.; Chassagnon, R.; Pinto, André Luiz; Sampaio, Luiz C.; Sacilotti, M.

doi:10.1016/j.jcrysgro.2015.08.009

Cited by 5 publications

(5 citation statements)

References 47 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Cerqueira et al (2015) detailed the MOCVD system and realized similar experimental setup using with different growth conditions. 10 The dimensions of each sample were 9.5mm × 6.5mm. The substrates were initially cleaned with acetone and ethanol to remove organic grease and then washed with DI water for 10 min to remove the native oxide present on the surface before deposition.…”

Section: Methodsmentioning

confidence: 99%

Optimizing GaxOy Growth Tendency of 3D Structures on Different Substrates through the MOCVD Technique

Yaseen

Nunes

Sacciloti

et al. 2019

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

The main purpose of this study was to optimize the GaxOy growth on different substrates surfaces under constant deposition temperature. Metallic gallium in liquid form was successfully deposited on Ti alloy, Silicon and Sapphire substrates by using metallorganic chemical deposition technique. It resulted in microspherical-shaped liquid gallium (GaxOy) just by adjusting the deposition parameters such as temperature, partial pressure and time. For these results, oxygen was not properly provided during the deposition. SEM, XRD, PL (photoluminescence) and XPS techniques featured the morphology and structure of the samples “as-deposited”. The growth at 650°C resulted in randomly distributed GaxOy microspheres with the diameter ranging between 80nm and 200nm and amorphous or polycrystalline phase. Peaks of the PL spectra at 420nm (Ti alloy), 480nm (Si) and 410nm (Sapphire) revealed oxygen-based defects in the deposition layer. Further, XPS confirmed the presence of Ga and oxygen with specific binging energy and atomic concentration.

show abstract

Section: Methodsmentioning

confidence: 99%

Optimizing GaxOy Growth Tendency of 3D Structures on Different Substrates through the MOCVD Technique

Yaseen

Nunes

Sacciloti

et al. 2019

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…On the other hand, Husanu et al [40] report a P-limited GaP nanowire growth rate grown with pre-cracked tertiarybutyl phosphine and TEGa in CBE system. More similar to our material system, the Ga x In (1−x) P nanowires grown in MOVPE with TEGa by Cerqueira et al [41] were grown on a Si substrate using InP powder as the source for In and P, whereas the Ga x In (1−x) P nanowires by Oliveira et al [42] were grown on a GaAs (100) substrate using TEGa in a CBE reactor. However, neither of these two articles on Ga x In (1−x) P nanowire growth by use of TEGa contain systematic investigation of growth dynamics.…”

Section: Introductionmentioning

confidence: 94%

“…TEGa has previously been used for nanowire growth of for instance GaAs [33][34][35][36][37][38], InGaAs [39], GaP [40], and Ga x In (1−x) P [41,42]. Most of these articles are focused on crystal structure, stacking faults and defects, with only some investigating growth kinetics, where a direct comparison to our study is complicated by differences in the experimental methods, such as reactor design, choice of substrate material, catalyst particles and choice of precursors.…”

Section: Introductionmentioning

confidence: 99%

Growth kinetics of Ga _x In_(1−x)P nanowires using triethylgallium as Ga precursor

et al. 2018

View full text Add to dashboard Cite

Ga InP nanowire arrays are promising for various optoelectronic applications with a tunable band-gap over a wide range. In particular, they are well suited as the top cell in tandem junction solar cell devices. So far, most Ga InP nanowires have been synthesized by the use of trimethylgallium (TMGa). However, particle assisted nanowire growth in metal organic vapor phase epitaxy is typically carried out at relatively low temperatures, where TMGa is not fully pyrolysed. In this work, we developed the growth of Ga InP nanowires using triethylgallium (TEGa) as the Ga precursor, which reduced Ga precursor consumption by about five times compared to TMGa due to the lower homogeneous pyrolysis temperature of TEGa. The versatility of TEGa is shown by synthesis of high yield Ga InP nanowire arrays, with a material composition tunable by the group III input flows, as verified by x-ray diffraction measurements and photoluminescence characterization. The growth dynamics of Ga InP nanowires was assessed by varying the input growth precursor molar fractions and growth temperature, using hydrogen-chloride as in situ etchant. We observed a complex interplay between the precursors. First, trimethylindium (TMIn) inhibits Ga incorporation into the nanowires, resulting in higher In composition in the grown nanowires than in the vapor. Second, the growth rate increases with temperature, indicating a kinetically limited growth, which from nanowire effective binary volume growth rates of InP and GaP can be attributed to the synthesis of GaP in Ga InP. We observed that phosphine has a strong effect on the nanowire growth rate with behavior expected for a unimolecular Langmuir-Hinshelwood mechanism of pyrolysis on a catalytic surface. However, growth rates increase strongly with both TEGa and TMIn precursors as well, indicating the complexity of vapor-liquid-solid growth for ternary materials. One precursor can affect the decomposition of another, and each precursor can affect the wetting properties and catalytic activity of the metal particle.

show abstract

“…The nanowire length was found to decrease with increasing Ga content, while higher V/III ratios resulted in longer nanowires. In a study by Cerqueira et al [66], GaInP nanowires were synthesized from InP powder and triethylgallium with no catalysts in an MOCVD reactor. The In content was varied by changing the reactor pressure.…”

Section: In X Ga 1−x Asmentioning

confidence: 99%

Assembling your nanowire: an overview of composition tuning in ternary III–V nanowires

Ghasemi¹,

Leshchenko

Johansson

2020

Nanotechnology

View full text Add to dashboard Cite

The ability to grow defect-free nanowires in lattice-mismatched material systems and to design their properties has made them ideal candidates for applications in fields as diverse as nanophotonics, nanoelectronics and medicine. After studying nanostructures consisting of elemental and binary compound semiconductors, scientists turned their attention to more complex systems—ternary nanowires. Composition control is key in these nanostructures since it enables bandgap engineering. The use of different combinations of compounds and different growth methods has resulted in numerous investigations. The aim of this review is to present a survey of the material systems studied to date, and to give a brief overview of the issues tackled and the progress achieved in nanowire composition tuning. We focus on ternary III x III1−x V nanowires (AlGaAs, AlGaP, AlInP, InGaAs, GaInP and InGaSb) and IIIV x V1−x nanowires (InAsP, InAsSb, InPSb, GaAsP, GaAsSb and GaSbP).

show abstract

(Ga,In)P nanowires grown without intentional catalyst

Cited by 5 publications

References 47 publications

Optimizing GaxOy Growth Tendency of 3D Structures on Different Substrates through the MOCVD Technique

Optimizing GaxOy Growth Tendency of 3D Structures on Different Substrates through the MOCVD Technique

Growth kinetics of Ga _x In_(1−x)P nanowires using triethylgallium as Ga precursor

Assembling your nanowire: an overview of composition tuning in ternary III–V nanowires

Contact Info

Product

Resources

About

(Ga,In)P nanowires grown without intentional catalyst

Cited by 5 publications

References 47 publications

Optimizing GaxOy Growth Tendency of 3D Structures on Different Substrates through the MOCVD Technique

Optimizing GaxOy Growth Tendency of 3D Structures on Different Substrates through the MOCVD Technique

Growth kinetics of Ga x In(1−x)P nanowires using triethylgallium as Ga precursor

Assembling your nanowire: an overview of composition tuning in ternary III–V nanowires

Contact Info

Product

Resources

About

Growth kinetics of Ga _x In_(1−x)P nanowires using triethylgallium as Ga precursor