Assembling your nanowire: an overview of composition tuning in ternary III–V nanowires

Abstract

The ability to grow defect-free nanowires in lattice-mismatched material systems and to design their properties has made them ideal candidates for applications in fields as diverse as nanophotonics, nanoelectronics and medicine. After studying nanostructures consisting of elemental and binary compound semiconductors, scientists turned their attention to more complex systems—ternary nanowires. Composition control is key in these nanostructures since it enables bandgap engineering. The use of different combinations of compounds and different growth methods has resulted in numerous investigations. The aim of this review is to present a survey of the material systems studied to date, and to give a brief overview of the issues tackled and the progress achieved in nanowire composition tuning. We focus on ternary III x III1−x V nanowires (AlGaAs, AlGaP, AlInP, InGaAs, GaInP and InGaSb) and IIIV x V1−x nanowires (InAsP, InAsSb, InPSb, GaAsP, GaAsSb and GaSbP).

Исследование влияния дозы ионно-лучевой обработки поверхности Si(111) на процессы роста нитевидных нанокристаллов GaAs

“…Нитевидные нанокристаллы (ННК) A III B V являются перспективными объектами для создания на их основе различных элементов и устройств фотоники, микро-и наноэлектроники, микромеханики и сенсорики благодаря сочетанию уникальных электронных, оптических и механических свойств [1][2][3][4]. Создание устройств на основе ННК требует разработки технологий управления их основными характеристиками (как вместе, так и по отдельности): размерами (длиной, диаметром), формой, химическим составом, легированием, плотностью [5]. В случае использования для формирования ННК механизма " пар−жидкость−кристалл" (ПЖК) это достигается путем регулирования основных параметров металлических нанокапель, выступающих в роли каталитических центров роста ННК, -их размера и пространственного расположения на поверхности подложки.…”

Surface energy driven miscibility gap suppression during nucleation of III–V ternary alloys

“…1 This is due to the possibility to tune one or more properties (band gap and lasing wavelength, lattice constant, magnetic properties) of the structure by varying its composition. Among structures of ternary alloys of different dimensions and morphology, ternary nanowires [2][3][4] have attracted great attention due to a broad spectrum of its possible application in optoelectronics, biotechnology and energy harvesting. 5 In contrast to elemental and binary compound semiconductors, the emission wavelength of optoelectronic devices based on ternary alloys can be adjusted by choosing from a continuous range determined by the two binaries.…”

“…For example, the miscibility gap in InGaAs materials system disappears at 543 °C, 14 while typical growth temperature of InGaAs nanowires by the molecular beam epitaxy and vapor phase epitaxy methods is in the range of 400-500 °C. 4 Thus, a large composition range of certain ternary alloys is thermodynamically forbidden. Understanding how to tune the composition of solid solutions over the entire range is needed to improve the quality of modern devices and to design promising structures such as vertical quantum wires.…”

Semiconductor Nanowire Field-Effect Transistors as Sensitive Detectors in the Far-Infrared

“…Semiconductor nanowire (NW) FETs also represent a very promising platform for the development of THz-frequency light detectors, owing to their typically low shunt capacitance, in the order of few aF [29], and to the possibility of nano-engineering and finetuning fundamental material properties, such as chemical composition [30], doping [31] and morphology [32]. These are enabled by the degree of maturity achieved by the growth techniques: chemical beam epitaxy (CBE) and molecular beam epitaxy (MBE).…”