This work presents a review on the current progress, challenges, and potential future development opportunities for two-dimensional material-based heterostructures, including their fabrication techniques as well as their applications in various functional devices. The fabrication techniques for two-dimensional material-based vertical heterostructure are first reviewed and discussed, including artificial stacking, chemical vapor deposition, molecular beam epitaxy, and others. Then, twodimensional material-based lateral heterostructure growth techniques are reviewed, including chemical vapor deposition and others. Subsequently, various functional device applications based on twodimensional material-based heterostructures are systematically reviewed and discussed, including electronic devices, optoelectronic devices, electrochemical devices, and others. The advantages and disadvantages for each fabrication/growth technique are compared and analyzed, including those for both vertical and lateral heterostructures. In addition, the current primary challenges for further development of two-dimensional material-based heterostructures and their functional devices are discussed and analyzed, including lack of precise control, low interface/surface quality, surface passivation issue, low light absorption, lack of system integration and application, complex device fabrication process, as well as low device fabrication efficiency. Various potential solutions are proposed that have the potential to overcome these existing primary challenges to achieve better device performance and thus their ultimate industry applications for the two-dimensional material-based heterostructures.

This work presents a study on the optical applications of chemical vapor deposition‐grown Sb2Se3 nanowires in polarized single nanowire photodetectors. High‐quality Sb2Se3 nanowires are obtained with diameters as small as ≈15 nm, which is the first report for ultrathin Sb2Se3 nanowires. The fabricated Sb2Se3 nanowire‐based photodetector presents a low shot noise of ≈ 9 × 10–16 A Hz–1/2, a large signal/noise ratio of 1436.55, a high responsivity of 3.61 A W–1, and a high specific detectivity of 2.36 × 1011 Jones, which can be attributed to the high‐quality crystalline nanowires obtained. More interestingly, the Sb2Se3 nanowire‐based photodetectors exhibit broadband polarized photoresponse to incident light with wavelengths ranging from visible to near‐infrared (532 – 830 nm). A linearly dichroic ratio of 1.71 is obtained for the 830 nm light illumination. The Sb2Se3 nanowire detectors also present appropriate polarimetric imaging quality, revealing the potential of Sb2Se3 nanowires for polarimetric imaging applications.