Ultrathin Sb₂Se₃ Nanowires for Polarimetric Imaging Photodetectors with a High Signal/Noise Ratio

Abstract

This work presents a study on the optical applications of chemical vapor deposition‐grown Sb2Se3 nanowires in polarized single nanowire photodetectors. High‐quality Sb2Se3 nanowires are obtained with diameters as small as ≈15 nm, which is the first report for ultrathin Sb2Se3 nanowires. The fabricated Sb2Se3 nanowire‐based photodetector presents a low shot noise of ≈ 9 × 10–16 A Hz–1/2, a large signal/noise ratio of 1436.55, a high responsivity of 3.61 A W–1, and a high specific detectivity of 2.36 × 1011 Jones, which can be attributed to the high‐quality crystalline nanowires obtained. More interestingly, the Sb2Se3 nanowire‐based photodetectors exhibit broadband polarized photoresponse to incident light with wavelengths ranging from visible to near‐infrared (532 – 830 nm). A linearly dichroic ratio of 1.71 is obtained for the 830 nm light illumination. The Sb2Se3 nanowire detectors also present appropriate polarimetric imaging quality, revealing the potential of Sb2Se3 nanowires for polarimetric imaging applications.

Junction‐Enhanced Polarization Sensitivity in Self‐Powered Near‐Infrared Photodetectors Based on Sb2Se3 Microbelt/n‐GaN Heterojunction

“…[6,7] Conventional polarizationsensitive PDs are composed of a complex system with various optical sensors and coupling components, which presents a challenge for their miniaturization on a chip. [8] Low-dimensional anisotropic materials, especially 2D materials, provide an alternative method to address this issue for fabricating high-performance, lowcost, and miniature polarization PDs. [9] The strategy depending on the anisotropic optical properties, which are derived from the intrinsic anisotropic crystal structure, has been utilized to realize polarization sensitivity.…”

One dimensional MOSFETs for sub-5 nm high-performance applications: a case of Sb2Se3 nanowires

“…Furthermore, Sb 2 Se 3 nanowires were also directly synthesized on WS 2 monolayers using sequential vapor-phase growth, showing that Sb 2 Se 3 nanowires are a good candidate for functional electronic and optoelectronic devices. 22 Very recently, Zhang et al 23 fabricated high-quality ultrathin Sb 2 Se 3 nanowires with diameters as small as E15 nm, and found that the Sb 2 Se 3 nanowire detectors also present appropriate polarimetric imaging quality. Moreover, Sb 2 Se 3 nanowires also have many potential applications in flexible photodetectors, 24 photoelectric devices, 25,26 lithium/sodium ion batteries, 27 photothermal devices, 28 thermoelectric cooling devices 29 and electrochemical devices.…”

Perpendicularly Reversed Polarization Sensitivity of Double‐faced Photodetection based on Sb2Se3 Microbelt

“…[4,5] Conventional polarization-sensitive PDs require complicated fabrication procedures and complex structures such as polarizers, lens systems, and detection elements. [6] Whereas, high cost, large volume, and heavyweight impede the miniaturization and integration for next-generation photoelectric devices. [7,8] Low-dimensional anisotropic materials with polarization characteristics are considered as promising candidates to overcome these issues owing to their tiny size, rich structures, strong light-matter interactions, and excellent compatibility.…”

“…1D materials, particularly 1D nano/ microstructures, may contain not only inherent anisotropy but also morphological anisotropy in the geometric structure along the long axis. [6] 1D nanostructures, such as InP, TiS 3 , Sb 2 Se 3 , and CsPbI 3 , have been utilized to realize polarization-sensitive photodetection. [14][15][16][17] Indeed, the polarization sensitivity of 1D nanostructures mainly originates from anisotropic morphology, because the diameter is much smaller than that of the optical wavelengths, but the length is considerably larger.…”

“…[9] The polarized photocurrent always achieves its maximum when the polarization direction of incident light is parallel to the long axis of 1D nanostructures. [6,14,15] The influence of crystal structure anisotropy and multi-faced features on the polarizationsensitive PDs based on 1D nanostructures will be overshadowed. To date, advancement has been limited to single-faced in-plane polarization-sensitive PDs.…”