The effect of soft X-ray irradiation of diamond-like carbon films in vacuum was investigated using synchrotron radiation (SR). Etching and the desorption of hydrogen upon SR exposure in vacuum occurred in highly hydrogenated diamond-like carbon (H-DLC) films; these processes were not observed in the irradiation of a low-hydrogenated DLC film. The extent of decrease in hydrogen content due to SR exposure was found to decrease with increasing the etching ratio of the H-DLC film. This indicates that hydrogen desorption from the H-DLC films competed with the etching process. Namely, the modified surface, in which hydrogen content was decreased by SR exposure, was immediately removed from the H-DLC film that had a high etching rate. #

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The thermal degradation of a native oxide layer on the hydrogen storage alloy V 25 Cr 40 Ti 35 and the thermal desorption property of deuterium molecules were studied by synchrotron radiation soft X-ray photoelectron spectroscopy and thermal desorption mass spectrometry. Photoelectron spectra of O-1s, C-1s, V-2p, Cr-2p, and Ti-2p were observed for an as-received sample and a deuterium-ion-implanted one. Although the oxide layer changed dramatically by thermal annealing between 373 K and 473 K for the un-implanted sample, the change of the deuterium-ion-implanted sample was lying between 473 K and 573 K corresponding to D 2 desorption. The implantation of deuterium resulted in the stabilization of the surface oxide layer by approximately 100 deg.

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The smooth and fragment-free films of b-FeSi 2 have been deposited on Si wafers by means of the pulsed laser deposition method. The exciting ArF excimer laser oscillated at 193 nm in wavelength where the fluence and repetition frequency were 3.5 J/cm 2 and 5 Hz, respectively. On a surface of a Si (100) substrate kept at 750°C, the deposited film consisted of a highly [100]-oriented single phase. It was found that the temperature of a e-FeSi target should be kept up to 700°C in order to obtain fragment-free epitaxial films.