We present results of endurance and retention characterization for one of the first commercially available TaO X -based resistive memory chip in room and higher temperature environments. Data retention of the memory chip shows activation energy of 1.13eV and demonstrates an 85°C 10year data retention even after 250,000 programming cycles. The combined program and read errors were in the range of 10 -7 to 10 -5 and the memory chip withstood 10 6 program cycles at 125°C. Overall, the reliability of this commercial resistive memory chip compares well with flash memory.

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