Megumi Ishiduki scite author profile

Program and erase operation on NAND-string of Bit-Cost Scalable (BiCS) flash memory has been successfully achieved. High boost efficiency of floating pillars and ONON (block oxide/charge SiN/tunnel oxide/tunnel SiN) structure as a memory film stack improve disturbance characteristics enough to realize tera-bit density of three dimensional flash memory. BiCS flash memory has become a more promising candidate for ultra high density memory.

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Three Dimensional Flash Memory with Bit Cost Scalable Technology for the Future Ultra High Density Storage Devices (Invited)

Aochi¹,

Kito²,

Fukuzumi³

et al. 2008

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Megumi Ishiduki

Optimal device structure for Pipe-shaped BiCS Flash memory for ultra high density storage device with excellent performance and reliability

Disturbless flash memory due to high boost efficiency on BiCS structure and optimal memory film stack for ultra high density storage device

Three Dimensional Flash Memory with Bit Cost Scalable Technology for the Future Ultra High Density Storage Devices (Invited)

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