The electrical conductivity of dense and nanoporous zirconia‐based thin films is compared to results obtained on bulk yttria stabilized zirconia (YSZ) ceramics. Different thin film preparation methods are used in order to vary grain size, grain shape, and porosity of the thin films. In porous films, a rather high conductivity is found at room temperature which decreases with increasing temperature to 120 °C. This conductivity is attributed to proton conduction along physisorbed water (Grotthuss mechanism) at the inner surfaces. It is highly dependent on the humidity of the surrounding atmosphere. At temperatures above 120 °C, the conductivity is thermally activated with activation energies between 0.4 and 1.1 eV. In this temperature regime the conduction is due to oxygen ions as well as protons. Proton conduction is caused by hydroxyl groups at the inner surface of the porous films. The effect vanishes above 400 °C, and pure oxygen ion conductivity with an activation energy of 0.9 to 1.3 eV prevails. The same behavior can also be observed in nanoporous bulk ceramic YSZ. In contrast to the nanoporous YSZ, fully dense nanocrystalline thin films only show oxygen ion conductivity, even down to 70 °C with an expected activation energy of 1.0 ± 0.1 eV. No proton conductivity through grain boundaries could be detected in these nanocrystalline, but dense thin films.

The electrical cross-plane conductivity of 8 mol% yttria stabilized zirconia (YSZ) thin films prepared by different deposition techniques, namely aerosol assisted chemical vapor deposition, wet spray pyrolysis (SP), and pulsed laser deposition (PLD), is correlated with their microstructure. Depending on deposition technique and process conditions, microstructures ranging from amorphous to randomly oriented nanocrystalline or columnar with preferred (111) orientation are obtained. Cross-plane AC impedance measurements of these thin films show that the oxygen ion conductivity of randomly oriented nanocrystalline samples is determined by the grain boundaries, which show significantly lower transport properties than the grain interior. In columnar microstructures, the conductivity is determined by ionic transport through the grains only. The same conduction behavior is found for amorphous and randomly oriented microstructures with grain sizes between 3 nm and 9 nm, indicating that no true size effects occur in 8 mol% YSZ.Grain and grain boundary conductivity determined for nanocrystalline 8 mol% yttria stabilized zirconia thin films of different microstructures.

Free‐standing electrolyte membranes for low‐temperature micro‐solid oxide fuel cells (micro‐SOFCs) are prepared by aerosol‐assisted chemical vapor deposition (AA‐CVD), a cost‐effective, non‐vacuum thin‐film deposition technique. Thin, yttria‐stabilized zirconia (YSZ) membranes (50–400 nm) as well as bilayer membranes of YSZ and gadolinia‐doped ceria are prepared at temperatures of 600 °C and below. AA‐CVD, which is a gas‐phase deposition method, allows for the synthesis of precursor‐free crystalline layers, thereby limiting the development of tensile stress. High membrane survival rates of around 90% are thus obtained. The columnar structure of the electrolyte ensures high oxygen‐ion conductivity and results in negligible ohmic losses. Using sputtered platinum electrodes, the demonstration of a micro‐SOFC based on AA‐CVD electrolyte is achieved and first power density data of 166 mW cm‐2 at 410 °C is obtained.

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