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BiCMOS processes provide not only standard NMOS devices, but also high‐performance SiGe HBTs, facilitating simultaneous use of both NMOS and HBT. This article adopts the advantages of both HBT and NMOS to achieve a high‐gain, high‐power, and efficient power amplifier (PA). Through an analysis of cascode amplifiers implementing different combinations of HBT and NMOS, a high‐performance 28‐GHz BiCMOS PA, which combines both HBT and body‐floating NMOS strengths to achieve 15.7‐dB gain, 19.6‐dBm saturated output power (Psat), 17.5‐dBm output 1‐dB compression (OP1dB), and 28.8% maximum PAE, is proposed for 5G applications.

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