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The ultraviolet (UV) electroluminescence (EL) from the TiO2/ZnO coaxial nanowires (NWs)/poly(3,4-ethylenedioxythiophene)-poly(styrene-sulfonate) inorganic/organic heterostructure devices is greatly enhanced and the defect emission is significantly suppressed compared with the uncoated ZnO NW device at room temperature. The origins of the great changes in EL of ZnO NW devices are attributed to the surface modification of the sputtered TiO2 coating and the reduction in the pinhole traps on the surface of ZnO NWs. It is found that for the optimized device, the EL intensity ratio between the band gap and defect emission can be greatly enhanced by up to about 250 times its prior level. Such ZnO NW devices with enhanced UV emission have potential applications in the highly efficient solid state emitters.

The inverted bulk-heterojunction solar cell on the polyester (PET) substrate with a nonannealing active layer is investigated. The atomic force microscope images show that the morphology of the nonannealing active layer of the inverted plastic solar cell evolves with time, which improves the performance of the solar cell. Our investigations show that the grain size of the active layer increases with time, resulting in improvements in the fill factor (from 34.8 to 62.8%) and shunt resistance (from 107 to 505Ωcm2 ) as well as a reduction in the series resistance (from 4.82 to 0.96Ωcm2 ). The easily processed inverted device with a nonannealing active layer on the indium tin oxide–coated PET substrate exhibits a high power conversion efficiency of ∼3.66% .

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