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an empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This macro-model implementation is the culmination of years of evolution in MOSFET modeling. This new version brings together the thermal and the electrical models of a VDMOS MOSFET. The existing electrical model [2], [3] is highly accurate and is recognized in the industry. The sequence of the model calibration procedure using parametric data is described. Simulation response of the new self-heating MOSFET model track the dynamic thermal response and is independent of SPICE's global temperature definition.

The4H-SiCvert ical double Imp lanted MOSFET (DIM OS) offers advantages over conventional silicon devices, enabling high system efficiency and/or reduced system size, weight and cost through its higher frequency operation. Co mpared to the best silicon IGBTs, the SiC device will improve system efficiency up to 2% and operate at 2-5 times the switching frequencies.In this paper we present an equivalent circuit Spice of 4H-SiC DIM OSFET fo r a wide temperature range. Simu lation for DC characteristics (I-V) of the SiC M OSFET with the exact device geometry is carried out using the commercial device simu lator Spice. All Sp ice parameters are extracted fro m the measurements, and a SPICE model for the DIMOS transistor has been developed and implemented in the circuit simu lator Orcad PSpice 10.5. The temperature dependent behaviour was simulated and analysed. A good agreement between the Spice simulat ion and analytical model evaluation for SiC DIMOS is demonstrated. Model parameters can be adjusted to obtain an optimu m device to be used in power system applications.

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