Silicon (Si) is generally considered as a poor photon emitter, and various scenarios have been proposed to improve the photon emission efficiency of Si. Here, we report the observation of a burst of the hot electron luminescence from Si nanoparticles with diameters of 150–250 nm, which is triggered by the exponential increase of the carrier density at high temperatures. We show that the stable white light emission above the threshold can be realized by resonantly exciting either the mirror-image-induced magnetic dipole resonance of a Si nanoparticle placed on a thin silver film or the surface lattice resonance of a regular array of Si nanopillars with femtosecond laser pulses of only a few picojoules, where significant enhancements in two- and three-photon-induced absorption can be achieved. Our findings indicate the possibility of realizing all-Si-based nanolasers with manipulated emission wavelength, which can be easily incorporated into future integrated optical circuits.

The low quantum efficiency of silicon (Si) has been a long-standing challenge for scientists. Although improvement of quantum efficiency has been achieved in porous Si or Si quantum dots, highly efficient Si-based light sources prepared by using the current fabrication technooloy of Si chips are still being pursued. Here, we proposed a strategy, which exploits the intrinsic excitation of carriers at high temperatures, to modify the carrier dynamics in Si nanoparticles. We designed a Si/SiO2 cuboid supporting a quasi-bound state in the continuum (quasi-BIC) and demonstrated the injection of dense electron-hole plasma via two-photon-induced absorption by resonantly exciting the quasi-BIC with femtosecond laser pulses. We observed a significant improvement in quantum efficiency by six orders of magnitude to ~13%, which is manifested in the ultra-bright hot electron luminescence emitted from the Si/SiO2 cuboid. We revealed that femtosecond laser light with transverse electric polarization (i.e., the electric field perpendicular to the length of a Si/SiO2 cuboid) is more efficient for generating hot electron luminescence in Si/SiO2 cuboids as compared with that of transverse magnetic polarization (i.e., the magnetic field perpendicular to the length of a Si/SiO2 cuboid). Our findings pave the way for realizing on-chip nanoscale Si light sources for photonic integrated circuits and open a new avenue for manipulating the luminescence properties of semiconductors with indirect bandgaps.

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Well-shaped micro/nano-structured suspended graphene is a versatile building block for micro/nano-electromechanical (MEMS/NEMS) devices. Directly ‘sculpting’ the suspended graphene membrane using an accelerated energetic electron/ion beam to form micro/nano-structured graphene possesses the merits of high resolution and well-processed flexibility. However, both the residual and process-induced stress in the membrane still challenge the obtaining of non-distorted freestanding graphene patterns. We report a featured double-sided masking and stress-release etching method to fabricate well-defined suspended graphene micro-ribbon. We demonstrated that the one-step low-energy (10 keV) electron beam induced the deposition of amorphous carbon (a-C) on both sides of the suspended graphene. The a-C layers were precisely self-aligned, not only allowing its use as reliable masks for the following plasma etch of suspended graphene, but showing potential for future applications of effectively ‘writing’ circuits/devices directly on both sides of a suspended 2D atomic-layered platform. A stress-release plasma etching process and its ‘self-crumpling’ mechanism were demonstrated. High-aspect-ratio micro-structured graphene (bridge and cantilever) with a good shape was obtained. This provides a promising and universal processing method for making suspended structures of 2D materials with in-plane flatness for potential MEMS/NEMS applications.

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