Logic circuits and the ability to amplify electrical signals form the functional backbone of electronics along with the possibility to integrate multiple elements on the same chip. The miniaturization of electronic circuits is expected to reach fundamental limits in the near future. Two-dimensional materials such as single-layer MoS2 represent the ultimate limit of miniaturization in the vertical dimension, are interesting as building blocks of low-power nanoelectronic devices, and are suitable for integration due to their planar geometry. Because they are less than 1 nm thin, 2D materials in transistors could also lead to reduced short channel effects and result in fabrication of smaller and more power-efficient transistors. Here, we report on the first integrated circuit based on a two-dimensional semiconductor MoS2. Our integrated circuits are capable of operating as inverters, converting logical “1” into logical “0”, with room-temperature voltage gain higher than 1, making them suitable for incorporation into digital circuits. We also show that electrical circuits composed of single-layer MoS2 transistors are capable of performing the NOR logic operation, the basis from which all logical operations and full digital functionality can be deduced.
We study the atomic scale microstructure of nonstoichiometric two-dimensional (2D) transition metal dichalcogenide MoSe 2Àx by employing aberration-corrected high-resolution transmission electron microscopy. We show that a Se-deficit in single layers of MoSe 2 grown by molecular beam epitaxy gives rise to a dense network of mirror-twin-boundaries (MTBs) decorating the 2Dgrains. With the use of density functional theory calculations, we further demonstrate that MTBs are thermodynamically stable structures in Se-deficient sheets. These line defects host spatially localized states with energies close to the valence band minimum, thus giving rise to enhanced conductance along straight MTBs. However, electronic transport calculations show that the transmission of hole charge carriers across MTBs is strongly suppressed due to band bending effects. We further observe formation of MTBs during in situ removal of Se atoms by the electron beam of the microscope, thus confirming that MTBs appear due to Se-deficit, and not coalescence of individual grains during growth. At a very high local Se-deficit, the 2D sheet becomes unstable and transforms to a nanowire. Our results on Se-deficient MoSe 2 suggest routes toward engineering the properties of 2D transition metal dichalcogenides by deviations from the stoichiometric composition.
In this Letter we demonstrate the operation of an analog small-signal
amplifier based on single-layer MoS2, a semiconducting analogue of graphene.
Our device consists of two transistors integrated on the same piece of
single-layer MoS2. The high intrinsic band gap of 1.8 eV allows MoS2-based
amplifiers to operate with a room temperature gain of 4. The amplifier
operation is demonstrated for the frequencies of input signal up to 2 kHz
preserving the gain higher than 1. Our work shows that MoS2 can effectively
amplify signals and that it could be used for advanced analog circuits based on
two-dimensional materials.Comment: Submitted version of the manuscrip
We describe how the Bi content of GaAs 1−x Bi x epilayers grown on GaAs can be controlled by the growth conditions in molecular beam epitaxy. Nonstandard growth conditions are required because of the strong tendency for Bi to surface segregate under usual growth conditions for GaAs. A maximum Bi content of 10% is achieved at low substrate temperature and low arsenic pressure, as inferred from x-ray diffraction measurements. A model for bismuth incorporation is proposed that fits a large body of experimental data on Bi content for a wide range of growth conditions. Low growth rates are found to facilitate the growth of bismide alloys with a low density of Bi droplets.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.