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Aluminum doped zinc oxide (ZAO) is presented in this letter as an alternative transparent electrode: optimized ZAO films offer excellent parameters for organic light emitting diodes (OLEDs). The ZAO films are applied to various p-i-n-type OLEDs. By using green phosphorescent molecules in a double emitter structure, very high efficiencies were obtained, namely, 54.6 cd/A and 61.5 lm/W for 100 cd/m(2) at 2.78 V. Additionally, white OLEDs on ZAO demonstrated pure white emission independent of the luminance and high efficiencies of 12.6 cd/A and 14.5 lm/W for 100 cd/m(2) at 2.6 V, which is comparable to indium-tin-oxide based white OLEDs

An OLED for lighting applications was successfully demonstrated on a 150mm ×150mm substrate with ITO anode. Additionally, ZnO:Al (ZAO) as an alternative transparent electrode for OLEDs was fabricated and applied to highly efficient p-i-n type green OLEDs and a white OLED for lighting applications. These devices showed similar performance as ITO anode based OLEDs.

OLED devices with electrically doped transport layers show low operating voltage, high efficiency and long lifetime. This paper demonstrates that the concept of p- and n-type electrical doping can be applied under manufacturing conditions. It shows that handling of dopants, adjustment of doping concentrations, and preparation of p-i-n type OLED stacks is possible with the worldwide first vertical in-line set-up. An in-line-manufactured highly efficient RGB-OLED-system is presented