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Etec Systems, Inc., an Applied Materials company, has completed the implementation and characterization of a deep ultraviolet (DUV), multibeam, raster-scanned mask patterning and integrated process solution. The ALTA Ò 4000 mask pattern generation system integrates a new data path, environmental control system, DUV optics, a 257nm DUV continuous-wave laser source, and an environmentally stable chemically amplified resist (CAR) process to deliver superior productivity, improved resolution, and critical dimension (CD) control required for volume 130nm mask production.Additionally, to obtain the maximum benefit of this mask pattern generation system, Etec has completed development of an environmentally stable CAR process, which has been tailored to allow the maskmaking industry to continue to receive pre-coated mask blanks from commercial suppliers. This paper details the system architecture and presents system performance and characterization data. The characterization results of the integrated system and process solution are also presented.This integrated pattern generation and process solution continues the tradition of the production workhorse ALTA product line with the introduction of the ALTA 4000 scanned-laser mask pattern generation system.

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Alignment performance data is presented on a high resolution laser scanning lithography system. The alignment system is a through-the-lens on-axis design which features multiple optical paths, such as bright-field and dark-field illumination and high and low magnification legs. Total system overlay is better than 0.10 tm. DW ALIGNMENT REQUIREMENTSTranslating design data into patterned photoresist on wafers typically requires two lithographic steps. First, data is transferred to a mask or reticle using either a laser scanning tool such as the ATEQ CORE-2500 or an e-beam system. Next, the patterned mask or reticle is projected onto a wafer coated with resist.Throughout this paper, I shall refer to systems which use two lithographic steps to transfer a pattern as Indirect Writers (1W). This is in contrast to Direct Writers (DW). As the name implies, a DW patterns a wafer without the need for creation of a mask or reticle.1W alignment systems must accurately register a wafer pattern to a reticle pattern. The most straightforward technique is to directly reference the reticle to the wafer through the projection lens. This approach eliminates baseline problems. 1W alignment systems require high precision. However, since they have a reticle to reference (either directly or indirectly) absolute accuracy is not required. Measurements (alignments) are concerned only with the relative offset of the projected reticle image to a pattern on the wafer.The alignment system requirements for a DW differ from those of an 1W because the DW has no mask or reticle to reference. A DW alignment system must possess both high precision and high accuracy. That is, the DW alignment system must function as an absolute position measurement system, rather than a null-detector. DW SYSTEM IMPLEMENTATION Print engine featuresATEQ has built a DW. This paper presents a description of the DW alignment system and initial characterization data. The main features of the DW are:. 364 nm Ar-ion laser source . 0.6 NA 20x reduction lens . 0.025 m minimum address size I handles 3" to 8" substrates . ability to print reticles Print engine implementationThe print engine architecture for the DW is derived from previous ATEQ products, specifically the CORE-2000, CORE-2100 and the recently introduced CORE-2500. The details of these systems are described elsewhere.lZ3 These systems are multiple-beam, raster-scanned laser exposure tools for mask and reticle fabrication.The system architecture is shown in Figure 1. 364 nm output from an Ar-ion laser is split into 8 parallel beams using SPIE Vol. 1264 Optical/Laser Microlithography 111(1990) / 387 Downloaded From: http://proceedings.spiedigitallibrary.org/ on 06/24/2016 Terms of Use: http://spiedigitallibrary.org/ss/TermsOfUse.aspx

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