The hydrolysis of carbonyl suflfide (COS), catalyzed by tertiary amines, was studied in a gas‐liquid reactor at ambient conditions. Rate constants determined in a batch reactor were similar to those determined in a continuous flow reactor. A Bronsted plot of the reaction data over the amine basicity range, 0 < pKB < 14, suggested that both amine basicity and steric factors determine catalytic behavior. The reaction data suggest a mechanism analogous to one used to explain the base catalyzed reaction of isocyanates with hydroxyl compounds. The mechanism would involve complexation of COS with amine followed by hydrolysis of the complex.

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A complete chromium oxide false(Cr2O3false) passivation technology has been developed for stainless steel surfaces for use in high purity gas‐delivery systems and process chambers. Starting with an electrochemical buffing (ECB) to add to electropolished (EP) SUS316L stainless steel material, an optimal thermal treatment was found by using a gas mixture of 10% hydrogen, 1–10 ppm oxygen and argon balance gas at 500°C for 1 h. Five‐day corrosion tests with normalHCl gas (containing 1.4 ppm moisture) at 5 kg/cm2 and 100°C showed no sign of corrosion on the chromium oxide passivated surface. Chemical stability tests on this surface with silane specialty gas thermal decomposition also showed a remarkable noncatalytic activity compared with conventional surfaces.

The extent of microbial growth in a continuous flow reactor is influenced by various degrees of fluid mixing which may range from one extreme of plug-flow to the other extreme of completely mixed flow. To assess the effect of mixing on the extent of microbial growth various flow models such as the tanks-in-series model and the axial dispersion model are often employed. Such flow models have been successfully applied to biological waste treatment processes by Murphy (1971) and Lee et al. (1971).The purpose of this note is to present and discuss the analytical solutions of differential equations describing the extent of microbial growth based on the axial dispersion model under the assumption that the specific growth rate does not depend on the substrate concentration. The assumption permits the differential equations to be solved analytically and provides useful limiting case for more complicated substrate limited systems. These results should be useful in connection with fermentation processes and biological waste water treatment.dimensionless form with Danckwerts' boundary conditions:where Pe is the Peclet number. Pe is a measure of the degree of mixing, ranging from Pe = 0 (completed mixed flow) to Pe = c4 (plug flow).The solution can be obtained by a standard method such as Laplace transformation for the following three cases:where Specifically two problems are considered. The first is concerned with steady state solution with nonsterile feed.The second is concerned with the transient and steady state solution with sterile feed. (ii) Pe = 4K Pe STEADY STATE GROWTH WITH NONSTERILE FEED [ X ( 0 ) > 01 1 + 2 ( 1x ) X ( z ) = Pe 1 + -4The differential equation based on the axial dispersion model for this case can be represented in the following

In this paper, we studied the SiHo thermal decomposition behaviors (100 ppm in Ar) on various modified polysilicon surfaces. We found the decomposition rates on Si-H and poly-Si surfaces are essentially the same while the rates on n+ and Si-O surfaces are slower. Rates on p+, Si-F and Si-Cl surfaces are very reactive even at low temperature. Thus it is possible to achieve a high selective film deposition by controlling the surface conditions and temperatures.