Conducting polyaniline is found to be suitable for several lithographic applications. With the use of onium salts, polyaniline is made radiation sensitive and shown to be a high resolution conducting photo and electron‐beam resist. Conducting lines of 0.25 μm have been patterned with e‐beam irradiation. Thin films of conducting polyaniline are found to be effective discharge layers for e‐beam lithography. Insulating resist systems charge during e‐beam exposure, which results in pattern displacements. When polyaniline is used as a conducting layer below the imaging resist, no pattern displacements are observed. Polyaniline is also shown to eliminate charging during the high resolution inspection and dimensional measurements of X‐ray and optical masks by scanning electron microscopy (SEM) when used as a coating on top of the mask. In addition, polyaniline can be used for electrolytic and electroless type metallization processes.

Electrically conducting polyaniline is found to be suitable for several lithographic applications. Because the polyaniline is not significantly soluble in the conducting state, the material has generally been processed by first applying the soluble, nonconducting version of the material, and in a second step externally doping the polymer film with aqueous acids. We have eliminated the need for this type of external doping by developing methods of inducing the doping in a dry fashion in situ in the polymer. This-is accomplished by incorporating onium salts or amine triflate salts in the polyaniline which decompose upon radiation or thermal treatment, respectively, to generate the active dopant species, i.e., protonic acids. The use of these in situ dopants simplifies the processing of the conducting polyaniline and makes the material more convenient for lithographic applications. With the use of onium salts, the polyaniline is made into a high resolution negative conducting resist. 0.25 f-Lm conducting lines have been patterned with e-beam radiation. Polyaniline is found· to be an effective discharge layer for e-beam lithography and a removable discharge layer for the high resolution inspection and dimensional measurements of xray and optical masks by scanning electron microscopy (SEM). In addition, the poly aniline can be used for both electrolytic and electro less-type metallization processes.

ne of the inaiiichal1enges for the industrialization of the alternating phase shift mask technique is the geometrical design of the phase shifters. The problem is complex and software development is required to achieve automation. This data preparation is necessary in order to apply the most powerful optical enhancement technique, the alternating PSM, to the gate lithography of logic designs 1,2 After the implementation of tin algorithm, very promising on sinai! flat geometrical designs of a few hundred transistors, it has been decided to test this software on complete circuits. This paper deals with the issues associated with alternating pattern generation on complex circuits. In particular, the use of layout hierarchy is essential to obtain an acceptable amount of manual intervention aiul computer processing time. There are two kinds of limitations to this global approach. First, the overlapping or the proximity of cells in the hierarchy may not he compatible with a cell-by-cell generation of phase shifters. Secondly, SOIIIC local design configurations may he difficult to phase shift. The question is: "is the number of occurrences of such cases manageable?" This presentation is illustrated by our experience on a multiplier design of about 15000 transistors, created using a standard cell library in 0.25 micron technology. This work shows that the theoretically difficult cases of layout hierarchy or geometrical design are not critical in practice. In particular, the design method based on standard cell libraries creates a hierarchy which is very favorable to our approach. This article presents a method for the alternating patten generation on complex circuits which is based on two maui points first, on a software able to generate alternating phase shifters on sinai! flat cells, and secondly, on the advantage of using layout hierarchy.

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