The problem and the solution. The growing interest developed around transfer of tacit knowledge and its effect on performance has not been matched by an equivalent effort to provide empirical evidence supporting these hypotheses This study of eight firms in Bogotá, Colombia focuses on the process of within-firm transfer of tacit knowledge and the seven dimensions of the learning organization as determinants of performance.

No abstract

No abstract

We present first‐season infrared (IR) and optical photometry and spectroscopy of the Type Ia Supernova 1998bu in M96. We also report optical polarimetry of this event. SN 1998bu is one of the closest type Ia supernovae of modern times, and the distance of its host galaxy is well determined. We find that SN 1998bu is both photometrically and spectroscopically normal. However, the extinction to this event is unusually high, with We find that SN 1998bu peaked at an intrinsic Adopting a distance modulus of 30.25 (Tanvir et al.) and using Phillips et al.'s relations for the Hubble constant, we obtain Combination of our IR photometry with those of Jha et al. provides one of the most complete early‐phase IR light curves for a SN Ia published so far. In particular, SN 1998bu is the first normal SN Ia for which good pre‐tBmax IR coverage has been obtained. It reveals that the J, H and K light curves peak about 5 days earlier than the flux in the B‐band curve.

Major efforts are currently underway throughout the IC industry to develop the capability to integrate device chips by stacking them vertically and using through-silicon vias (TSVs). The resulting interconnect density, bandwidth, and compactness achievable by TSV technology exceed what is currently possible by other packaging approaches. Market-driven applications of TSV involving memory include multi-chip high-performance DRAM, integration of memory and logic functions for enhanced video on handheld devices, and stacked NAND flash for solidstate drives. High-volume commercial implementation of 3D TSV is imminent but faced by special challenges of design, fabrication, bonding, test, reliability, know-good die, standards, logistics, and overall cost. The main focus of this paper is the unit-process and process-integration technology required for TSV fabrication at the wafer level: deep silicon etching, dielectric via isolation, metallization, metal fill, and chemicalmechanical polishing.