As the progress of the packaging technology for the electronic consuming devices, the customer demands more and more. From the trend of the development on electronic devices, it shows that these demands require for more functions or higher density of devices within a limited space. By the capabilities of the 3D-IC technology, it could support such a design with multi-purposes including a smaller size, the high-speed and multi-functions. There are many approaches and technologies to make the 3D-IC. Amount of them, the stacking with Through-Silicon-Via (TSV), plays a very important role. It shortens the path of the circuit in a device. And hence, this device may support a faster operation. In this study, we analyze the different designs based on two TSV technologies, the Cu-filled and coaxial-type TSVs. By using the simulation approach, we evaluate the performances of these proposed designs. And, the results in our study should have the benefits for designing the interposer substrates which are used for developing the 3D-IC.

Direct silicon bonding (DSB) for hybrid orientation technology has recently generated a lot of interest due to the significant performance enhancements reported for p-channel metal oxide semiconductor devices fabricated on alternative substrate orientations. This letter reports on the experimental observation and density functional theory (DFT) based theoretical prediction of a valence band offset between the (100) and (110) silicon surfaces directly bonded to each other. This constitutes a different type of junction created by the presence of two different surface orientations in close proximity to each other and not by doping or material variations. Experimentally, this band offset was observed as an asymmetry in the forward and reverse current-voltage characteristics of a two terminal device designed to flow a current across the DSB interface. Further, the valence band offset obtained from DFT simulations was used in a conventional device simulator (TAURUS-MEDICI) to simulate the behavior of this structure. MEDICI results are in qualitative agreement with the predicted band offset of ∼85meV between the (110) and (100) surfaces which result in a diodelike behavior of the current-voltage characteristics across the (110)∕(100) interface. Temperature dependence of the I-V characteristics is also discussed.

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