2016 IEEE 66th Electronic Components and Technology Conference (ECTC) 2016
DOI: 10.1109/ectc.2016.156
|View full text |Cite
|
Sign up to set email alerts
|

The Development and the Integration of the 5 µm to 1 µm Half Pitches Wafer Level Cu Redistribution Layers

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1

Citation Types

0
2
0

Year Published

2019
2019
2023
2023

Publication Types

Select...
5
2

Relationship

0
7

Authors

Journals

citations
Cited by 12 publications
(2 citation statements)
references
References 2 publications
0
2
0
Order By: Relevance
“…Figure 31 shows the cross section of a FOWLP with hybrid RDLs published by SPIL in Ref. [109]. For other hybrid-RDLs, see Refs.…”
Section: Hybrid-redistribution Layers (First Inorganic Redistributionmentioning
confidence: 99%
“…Figure 31 shows the cross section of a FOWLP with hybrid RDLs published by SPIL in Ref. [109]. For other hybrid-RDLs, see Refs.…”
Section: Hybrid-redistribution Layers (First Inorganic Redistributionmentioning
confidence: 99%
“…The damascene process is a wiring process that relies on the CMP to remove extra material. It can effectively improve the surface flatness and reduce the total thickness variation in multilayer wiring, making it possible to generate a higher density of lines using lithography [28]. Thus, the effectiveness of the CMP method could be verified in the damascene process.…”
Section: Introductionmentioning
confidence: 99%