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200)-oriented Pt thin films were deposited on SiO 2 ͞Si substrates by dc magnetron sputtering using Ar͞O 2 gas mixtures. Oxygen incorporation into Pt films changed deposition rate, resistivity, stress, and preferred orientation of the films. Increase in film resistivity and decrease in tensile stress were presumed to be the results of the incorporated oxygen into grain boundaries, while the change of preferred orientation resulted from the oxygen incorporation into the Pt lattice. The preferential growth of (200) planes with less total strain energy from the incorporated oxygen resulted in strong (200) preferred orientation in Pt films.

Highly (200)-oriented Pt films on SiO2/Si substrates were successfully prepared by a combination of a dc magnetron sputtering using Ar/O2 gas mixtures and subsequent controlled annealing. The intensity ratio of (200) to (111) planes (I200/I111) was over 200. The (200)-oriented Pt microcrystallites were less susceptible to amorphization due to their lower strain energy with oxygen incorporation than (111)-oriented ones. The controlled grain growth from the selected (200)-oriented seed microcrystallites during subsequent annealing provided a kinetic pathway where grain growth of the seed microcrystallites was predominant, while suppressing the nucleation of surface energy-driven, (111)-oriented seed microcrystallites and subsequent (111) preferred orientation.

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The WO3-x thin films were prepared on indium tin oxide (ITO) coated glass at 0.7 oxygen flow ratio [O2/(Ar+O2)] using the facing targets sputtering (FTS) system at room temperature. In order to obtain the annealing effect, as-deposited thin films were annealed at temperatures of 100, 200, 300, 400, and 500 °C for 1 h in open air. The structural properties of the WO3-x thin film were measured using an X-ray diffractometer. The WO3-x thin films annealed at up to 300 °C indicated amorphous properties, while those annealed above 400 °C indicated crystalline properties. The electrochemical and optical properties of WO3-x thin films were measured using cyclic voltammetry and a UV/vis spectrometer. The maximum value of coloration efficiency obtained was 34.09 cm2/C for thin film annealed at 200 °C. The WO3-x thin film annealed at 200 °C showed superior electrochromic properties.