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Artificial color pixels based on dielectric Mie resonators are appealing for scientific research as well as practical design. Vivid colors are imperative for displays and imaging. Dielectric metasurface-based artificial pixels are promising candidates for developing flat, flexible, and/or wearable displays. Considering the application feasibility of artificial color pixels, wide color gamuts are crucial for contemporary display technology. To achieve a wide color gamut, ensuring the purity and efficiency of nanostructure resonance peaks in the visible spectrum is necessary for structural color design. Low-loss dielectric materials are suitable for achieving vivid colors with structural color pixels. However, high-order Mie resonances prevent color pixels based on dielectric metasurfaces from efficiently generating highly saturated colors. In particular, fundamental Mie resonances (electric/magnetic dipole) for red can result in not only a strong resonance peak at 650 nm but also high-order Mie resonances at shorter wavelengths, which reduces the saturation of the target color. To address these problems, we fabricated silicon nitride metasurfaces on quartz substrates and applied Rayleigh anomalies at relatively short wavelengths to successfully suppress high-order Mie resonances, thus creating vivid color pixels. We performed numerical design, semianalytic considerations, and experimental proof-of-concept examinations to demonstrate the performance of the silicon nitride metasurfaces. Apart from traditional metasurface designs that involve transmission and reflection modes, we determined that lateral light incidence on silicon nitride metasurfaces can provide vivid colors through long-range dipole interactions; this can thus extend the applications of such surfaces to eyewear displays and guided-wave illumination techniques.

Graphene is a two-dimensional (2D) structure that creates a linear relationship between energy and momentum that not only forms massless Dirac fermions with extremely high group velocity but also exhibits a broadband transmission from 300 to 2500 nm that can be applied to many optoelectronic applications, such as solar cells, light-emitting devices, touchscreens, ultrafast photodetectors, and lasers. Although the plasmonic resonance of graphene occurs in the terahertz band, graphene can be combined with a noble metal to provide a versatile platform for supporting surface plasmon waves. In this study, we propose a hybrid graphene–insulator–metal (GIM) structure that can modulate the surface plasmon polariton (SPP) dispersion characteristics and thus influence the performance of plasmonic nanolasers. Compared with values obtained when graphene is not used on an Al template, the propagation length of SPP waves can be increased 2-fold, and the threshold of nanolasers is reduced by 50% when graphene is incorporated on the template. The GIM structure can be further applied in the future to realize electrical control or electrical injection of plasmonic devices through graphene.

The crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on trenched a-plane GaN buffer layers. Not only the threading dislocation density but also the difference of anisotropic in-plane strain between orthogonal crystal axes can be mitigated by using trenched epitaxial lateral overgrowth ͑TELOG͒. The low threading dislocation density investigated by the cross-sectional transmission electron microscopy was estimated to be 3 ϫ 10 7 cm −2 on the N-face GaN wing. On the other hand, the Ga-face GaN wing with a faster lateral overgrowth rate could be influenced by the thin GaN layer grown on the bottom of the trenches, resulting in higher dislocation density generated. As a result, the authors concluded that a narrower stripped GaN seeds and deeper stripped trenches etched into the surface of sapphire could derive a better quality a-plane GaN film. Finally, they demonstrated the fast coalescence process of TELOG GaN films below 10 m thick.

In O-and C-band optical communications, Ge is a promising material for detecting optical signals that are encoded into electrical signals. Herein, we study 2D periodic Ge metasurfaces that support optically induced electric dipole and magnetic dipole lattice resonances. By overlapping Mie resonances and electric dipole lattice resonances, we realize the resonant lattice Kerker effect and achieve narrowband absorption. This effect was applied to the photodetector demonstrated in this study. The absorptance of the Ge nanoantenna arrays increased 6-fold compared to that of the unpatterned Ge films. In addition, the photocurrent in such Ge metasurface photodetectors increases by approximately 5 times compared with that in plane Ge film photodetectors by the interaction of these strong near-fields with semiconductors and the further transformation of the optical energy into electricity.