2006
DOI: 10.1063/1.2405880
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Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density

Abstract: The crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on trenched a-plane GaN buffer layers. Not only the threading dislocation density but also the difference of anisotropic in-plane strain between orthogonal crystal axes can be mitigated by using trenched epitaxial lateral overgrowth ͑TELOG͒. The low threading dislocation density investigated by the cross-sectional transmission electron microscopy was estimated to be 3 ϫ 10 7 cm −2 on the N-face GaN wing. On the other ha… Show more

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Cited by 21 publications
(15 citation statements)
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“…These extended defects should be eliminated to achieve a high performance of nonpolar GaN devices. Epitaxial lateral overgrown (ELOG) and Pendeo epitaxy (PE) approaches have been demonstrated to be an effective approach for reduction of extended defect density [6,7]. The ELOG and PE process a can dramatically eliminate most of the defects.…”
Section: Introductionmentioning
confidence: 99%
“…These extended defects should be eliminated to achieve a high performance of nonpolar GaN devices. Epitaxial lateral overgrown (ELOG) and Pendeo epitaxy (PE) approaches have been demonstrated to be an effective approach for reduction of extended defect density [6,7]. The ELOG and PE process a can dramatically eliminate most of the defects.…”
Section: Introductionmentioning
confidence: 99%
“…In addition, the lattice mismatch between the a-plane GaN and r-plane sapphire results in a serious anisotropic in-plane strain difference between orthogonal crystal axes [9]. Therefore, we have proposed an approach to improve [1 1 2 0] a-plane GaN quality by using epitaxial lateral overgrowth on trenched a-plane GaN buffer layers [10]. The trenched epitaxial lateral overgrowth (TELOG) allowed us to obtain a-plane GaN with low dislocation density, simple fabrication process, lower cost, and thinner coalescence thickness in comparison with previous reports [11,12].…”
Section: Introductionmentioning
confidence: 99%
“…To eliminate such polarization effects, growth along non-polar orientations has been respectively explored for [1120] a-plane GaN on [10 12] r-plane sapphire [2] and a-plane SiC [3], [10 10] m-plane GaN on [100] LiAlO 2 substrates [4], and direct grown on the a-plane or m-plane GaN substrate [5]. And several kinds of techniques to reduce the defect density were also developed such as TELOG [6], ELOG, insitu-SiN x [7] etc.…”
Section: Introductionmentioning
confidence: 99%