Conventionally, CoSi2 is considered to be a better choice than TiSi2 for integrated circuit fabrication due to its lower resisitivity and better thermal stability. In this letter we compare for the first time the stress reliability of metal–oxide–semiconductor (MOS) devices with CoSi2 and TiSi2 as gate electrode materials. We found that the use of TiSi2 as a gate electrode material can provide a better stress resistance than CoSi2, when negatively-biased constant current stress and constant voltage stress are applied.