No abstract

Monolithic integration of III-V laser sources on standard silicon-on-insulator (SOI) substrate has been recognized as an enabling technology for realizing Si-based photonic integration circuits (PICs). The Si-based ridge lasers employing III-V quantum dot (QD) materials are gaining significant momentum as it allows massive-scalable, streamlined fabrication of Si photonic integrated chips to be made cost effectively. Here, we present the successful fabrication of InAs/GaAs QD ridge lasers monolithically grown on {111}-faceted SOI hollow substrates. The as-cleaved Fabry-Perot (FP) narrow ridge laser is achieved with a relatively low threshold current of 50 mA at room temperature under pulse current operation. The maximum working temperature achieved is up to 80 oC. The promising lasing characteristics of such SOI-based InAs/GaAs QD ridge lasers with low threshold current and small footprint provide a viable route towards large-scale, low-cost integration of laser sources on SOI platform for silicon photonic integration purpose.

Semiconductor mode-locked lasers (MLLs) with extremely high repetition rates are promising optical frequency comb (OFC) sources for their usage as compact, high-efficiency, and low-cost light sources in high-speed dense wavelength-division multiplexing (DWDM) transmissions. The fully exploited conventional C- and L- bands require the research on O-band to fulfil the transmission capacity of the current photonic networks. In this work, we present a passive two-section InAs/InGaAs quantum-dot (QD) MLL-based OFC with a fundamental repetition rate of ~100 GHz operating at O-band wavelength range. The specially designed device favours the generation of nearly Fourier-transform-limited pulses in the entire test range by only pumping the gain section while with the absorber unbiased. The typical integrated relative intensity noise (RIN) of the whole spectrum and a single tone are -152 dB/Hz and -137 dB/Hz in the range of 100 MHz to 10 GHz, respectively. Back-to-back (B2B) data transmissions for 7 selected tones have been realised by employing a 64 Gbaud four-level pulse amplitude modulation format (PAM-4). The demonstrated performance shows the feasibility of the InAs QD MLLs as a simple structure, easy operation, and low power consumption OFC sources for high-speed fibre-optic communications.