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SUMMARYThe object of this paper is to analyse by the finite element method the dynamic responses of a flat plate subjected to various moving loads. First of all the actual continuous flat plate was replaced by a discrete system composed of isoparametric rectangular plate elements. And then the elementary and overall stiffness and mass matrices were determined and the natural frequencies and mode shapes of the flat plate were solved. Next, the Newmark direct integration method was used to find the dynamic responses of the flat plate.The effects of eccentricity, acceleration and initial velocity of the moving load, and the effect of span length were the key points of study. The dynamic behaviour of a multi-span flat plate supported by the beam members of rigid plane frames and subjected to the action of a series of moving loads (in identical or opposite directions) were also investigated.

In the paper, a simplified six degrees of freedom mathematical model encompassing calm water maneuvering and traditional seakeeping theories is developed to simulate the ship turning circle test in regular waves. A coordinate system called the horizontal body axes system is used to present equations of maneuvering motion in waves. All corresponding hydrodynamic forces and coefficients for seakeeping are time varying and calculated by strip theory. For simplification, the added mass and damping coefficients are calculated using the constant draft but vary with encounter frequency. The nonlinear mathematical model developed here is successful in simulating the turning circle of a containership in sea trial conditions and can be extended to make the further simulation for the ship maneuvering under control in waves. Manuscript received at SNAME headquarters February 19, 2003; revised manuscript received January 27, 2004.

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We report the impact of oxygen (O2) plasma time on an amorphous indium–gallium–zinc oxide (a-IGZO) thin-film surface that was carried out before TEOS deposition in order to optimize the performance of thin-film transistors (TFTs). TheO2 plasma time of 60 s possessed the largest on/off current ratio of >108, with a field-effect mobility (µFE) of 8.14 cm2 V−1 s−1, and the lowest subthreshold swing (S.S.) of 0.395 V/decade, with a threshold voltage (Vth) of −0.14 V. However, increases in Ioff and S.S. and decreases in the µFE were observed for the longer O2 plasma time of 120 s. As the O2 plasma time increased, the reduction in the carrier concentration in the IGZO channel layer may have resulted in an increase in Vth for the IGZO TFT devices. With an increase in the O2 plasma time, the surface roughness of the IGZO channel layer was increased, the carbon content in the TEOS oxide film was reduced, and the film stoichiometry was improved. The SIMS depth profile results showed that the O/Si ratio of TEOS oxide for the sample with the O2 plasma time of 60 s was 2.64, and its IGZO TFT device had the best electrical characteristics. In addition, in comparison to the IGZO TFT device without O2 annealing, larger clockwise hysteresis in the transfer characteristics revealed that a greater number of electrons were trapped at the interface between TEOS oxide and the a-IGZO channel layer. However, hysteresis curves of the O2-annealed IGZO TFTs with various O2 plasma times were greatly reduced, meaning that the electron traps were reduced by O2 annealing.