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Referred to the laser structure and its experimental results obtained by Selmic et al. and Liu et al., optimized active structure for the 1.55-µm quantum well lasers based on AlGaInAs material system is investigated. A structure with 1.2% compressive-strained wells and a p-type AlInAs electron stopper layer of 20 nm thickness and 5×10 23 m −3 doping concentration is suggested. Using this structure the threshold current is reduced to 17.8 mA, and the electron overflow percentage is decreased to 1.74% at 330 K. Furthermore, the characteristic temperatures of threshold currents are enhanced to 55.6 K, 67.0 K, and 43.3 K in operating temperature ranges of 300 K~350 K, 300 K~330 K, and 330 K~350 K, respectively.

Al nanoparticles (NPs) are incorporated in the active layers to enhance the performance of organic solar cells (OSCs). The improved short circuit current Jsc and power conversion efficiency (PCE) for OSCs with Al NPs are observed. A final PCE of 3.66wt% is achieved, which is an improvement of more than 30wt% compared to a standard cell with a PCE of 2.84wt%. When the mass of Al NPs is 10wt% of OSCs, the device performance is best. The optical performance of OSCs reveals that the absorption from sunlight increases. The external quantum efficiency spectra suggests that the Al NPs in the active layers influence the efficiency of converting photons into electrons, which leads to the improvements in the photocurrent. The enhanced photovoltaic performance induced by incorporating Al NPs in the active layer is discussed in the terms of increasing charge separation at the donor-acceptor interface and the effectively decreasing transmission distance of charge in polymer.

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