Nitrogen doped carbon film has been grown on silicon substrate at temperature of 60 degrees in the methanol-ammonia solution. The substrate was negatively biased with a dc potential less than 100 V for current density of 4 mA/cm 2 as constant-current electrolysis. The work function and the resistivity of the film decreased remarkably. From the results of Raman spectra and X-ray photoelectron spectroscopy, it was also confirmed that the film is amorphous containing only small amounts of diamond component, and nitrogen atoms are doped in the film though containing some organic residue.