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In the present study, we developed high crystalline quality Cd2+-doped ZnO (Cd:ZnO) scintillator by the liquid phase epitaxy (LPE) method to enhance the defect related emission in ZnO for α-ray detectors. In order to imitate the scintillator application, we investigated α-ray induced radio luminescence spectrum and emission bands peaking around 380 and 500 nm were observed, and the latter one was largely enhanced when compared with pure ZnO. Then, we optically coupled the sample with PMT R7600 by Silicone grease, and irradiated 241Am 5.5 MeV α-ray. Cd:ZnO showed about 700% light yield of pure ZnO scintillator and the total light yield turned out to be 18000 photons/5.5 MeV-α. The main component of the scintillation decay time constants turned out to be ∼1 ns and 2 µs due to the free exciton and the defect related emissions, respectively.

Using the liquid phase epitaxy (LPE) method we prepared the high crystalline quality In 3+ doped ZnO thin film scintillators with different Indium concentration of 26, 53, and 141 ppm. We evaluated their optical properties and radiation response, because there are few reports of radiation response of In-doped ZnO scintillator. In order to imitate the scintillator application, we measured the alpha-ray excited luminescence spectra. The emission bands peaking around 375 and 500 nm were observed, and with an increment of In 3+ , the intensity of both bands decreases. In the measurement of light yield, we optically coupled the sample with PMT R7600 by a silicone grease, and excitation was provided by 241 Am 5.5 MeV -rays. The samples showed of about 10% of the light yield of BGO scintillator which was used as a reference. Under the same excitation the scintillation decay was measured in all the samples as well.

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