The present work is concerned with the preparation of thin films of nanocrystalline porous silicon (PSi) by the method of electrochemical etching. CdTe nanoparticles (NPs) have been prepared by utilizing the pulsed laser ablation in liquid. The measurements of tunneling microscopy, X-ray diffraction (XRD), Fourier transformation infrared spectroscopy (FTIR) and atomic force microscopy (AFE) were carried out and revealed that the PSi was nanostructured and the produced CdTe NPs were ball shaped, having good disposability. The diffusion of CdTe NPs on the properties of PSi solar cell assures that there was an improvement upon their properties. The relationship between [Formula: see text] and the reverse bias voltage was observed to be linear. Values of the built-in potential were observed to be dependent on the laser fluence, current density and the etching time.

Various thin films of cadmium sulfide doped with different weight ratios (wt %) of indium (CdS: In), were prepared on glass substrates by Spray pyrolysis technique (SPT), The Microstructural, topography and optical characteristics were studied. Pure films and doped with In 1%. The results obtained revealed that the growth toward single crystalline hexagonal- cubic phases. The dominant reflection is in the direction (101) plane with a crystalline size 47.55 nm, which is calculated utilizing Scherrer equation. The increase in In to 3% tends the structure to be the poly crystalline with the existence of the prevalent reflection in the direction of (101) plane with a the crystal size of 53.89 nm. The topography measurements showed that the surfaces of the nanostructured are in the form of rods with a height of 1.99 nm and a diameter of 50-60 nm. The rod height decreased with the increasing in doping weight ratios, while the diameter of the rod increased. The optical measurements showed lower transmittance with the increasing of doping from T% 95 to T% 64. A decrease in the optical energy gap value was noticed.

The effect of the substrate temperature of the deposition of copper oxide prepared by chemical spray pyrolysis technique was studied. The XRD measurements show that all the films are polycrystalline structure with predominant phase(-111). The crystallite size increase with increasing substrate temperature. The AFM images in 1-D and the 2-D shows that the CuO nanostructure were in the shape of curly sticks growing in a vertical column at an average height of 2.00 nm and an average radius of 40 - 50 nm. These nanostructures of the 3% sample gets higher up to 9.00 nm. The value of the optical energy gap was calculated through the UV-Vis spectrometer and found to decrease with increasing the substrate temperature from 1.93 eV to 1.68 eV. Transmittance values also decreased from 79.5% to 36%.

No abstract

Nanostructured copper oxide (Cu2O) and cobalt doped (Co:Cu2O)thin films were prepared at varying doping by spray pyrolysis technique(SPT). X-ray diffraction patterns investigate t structural properties. Surface topography was studied by using Atomic Force Microscopy (AFM). Transmittance spectra were determined by a UV-Vis spectrophotometer and the results showed that pure and Co doped Cu2O Nanostructures have a bandgap values between (2.56 - 2.85) eV.