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Hydrogenated diamond-like Carbon (DLC) films have been deposited on Si substrates using CH4-based radio-frequency plasmas. The films have been doped with nitrogen by addition of either N2 or NH 3 into the source gas mixture, producing films with up to 16% and 25% N content, respectively. The effect of additions of Ne to these gas mixtures has been investigated as a possible method to increase the growth rate and the N-content of the films. We find that addition of Ne increases the film growth rate until the Ne flow rate equals that of the CH4, giving maximum growth rate increases of 70% and 200% for NH3 and N2 containing gas mixtures, respectively. At the same time the field emission threshold voltage decreases by a factor of ~ 0.5 and 2, respectively. With further increases in Ne flow rate, the film growth rates decrease in both cases, whilst the threshold voltage increases. Micro-combustion measurements show that the N content within the films is proportional to the percentage of the N-containing precursor in the gas phase, but is independent of Ne concentration.

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