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This paper presents a 4 2 switching matrix implemented in the Win 0.5 m GaAs pseudomorphic high electron mobility transistor process, it covers the 0.5-3 GHz frequency range. The switch matrix is composed of 4 SPDT switch whose two output ports can simultaneously select the input port and a 4 to 8 bit digital decoder, both the radio frequency (RF) part and the digital part are integrated into one single chip. The chip is packaged in a low cost QFN24 plastic package. On chip shunt, capacitors at the input ports are taken to compensate for the bonding wire inductance effect. The designed switch matrix shows a good measured performance: the insertion loss is less than 5.5 dB, the isolation is no worse than 30 dB, the return loss of input ports and output ports is better than -10 dB, the input 1 dB compression point is better than 25.6 dBm, and the OIP3 is better than 37 dBm. The chip size of the switch matrix is only 1.45 1.45 mm 2 .

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In this paper, an equivalent-circuit model of MAM (metal-air-metal) capacitor applied in RF MEMS devices is proposed. Also, equivalent-circuit model of distributed MEMS phase shifter with MAM capacitor are presented. The parametric analysis of the proposed models and the designing method are also presented. By adopting the unit cell (0111. 25°) of5-bit X-band distributed phase shifter, the paper discusses the model error and the efficiency of the proposed equivalent-circuit model. Compared with existing equivalent-circuit model, as for Sw the model error of the proposed equivalent-circuit model could be less than IdB, decreased by about ten times, and the model error for phase shift per unit cell could be less than 0. 5°, decreased by about thirteen times.978-1-4244-8223-8/10/$26.00