No abstract

This work was aimed to develop chemoresistive base sensor on silicon platform. Carbon nanotube (CNT) with low density was grown on passive interdigitated (IDE) based sensor which later can be functionalized with other material for the selectivity of the targeted goals. Low dense CNT will provide a bigger area of the functionalities element adhered to the wall hence increase the sensitivity of the sensor. In situ CNT growth was achieved using a PECVD machine with the time parameter was varied targeting for low dense CNT grow in-between the IDE fingers. SEM analysis reveals that low dense CNT was evidence for growth time as short as 30 s and as the time increase, the density was also increasing. Resistive probing of the grown CNT samples shows a drop in resistance compared to non-grown CNT which confirmed that the CNT successfully conducting the electron. CO 2 gas testing shows that the low dense sensor shows better detection performance compared to high dense sensor. However, further study needs to be conducted to measure the level of amorphous carbon which determine the purity of the such CNT nanostructure.

Triboelectric nanogenerators (TENGs) have been developed as promising energy-harvesting devices to effectively convert mechanical energy into electricity. A TENGs is using either organic or inorganic materials to initiate the triboelectrification process, followed by charge separation. In this study, a high-performance composite based triboelectric nanogenerators (CTENGs) device, based on PDMS as a polymeric matrix with BTO nano-powders (NPs) as dielectric fillers and graphene as conductive media was fabricated. The PDMS/BTO/GQD composite film was prepared with the GQD doped into the mixture of PDMS/BTO and mechanically stirred. The composition of GQD varied from 0 to 40 wt%. The composite was spin coated onto flexible ITO on PET sheet and dried in the oven at 80°C for 24 hours. The output performance of TENGs is enhanced by the increased concentration of 30 wt% GQD which is two times higher than nanocomposite films without GQD. The PDMS/BTO/G30 TENGs film showed an increase open-circuit voltage output (VOC), short-circuit current output (ISC) and power density reaching ~ 310.0 V, ~ 23.0 mA and 1.6 W/m2 respectively. The simple and scalable process for the PDMS/BTO/GQD TENGs would benefit as a sustainable energy harvesting system in small electronic devices.