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An interferometer based optical sensor for displacement measurement is reported. This method requires quite simple signal processing as well as least electronic components. Referring to this technique, two photodiodes spatially shifted by 90 degrees were used. The output of photodiodes was converted into rectangular signals which were extracted in LabVIEW using the data acquisition card without using an analog to digital converters (ADC). We have also processed the signals in C++ after acquiring via parallel port. A Michelson interferometer configuration was used to produce linear fringes for the detection of displacements. The displacement less than 100 nm could be measured using this technique.

Dye-sensitized solar cells produce saturation of electrons and holes when exposed to high-intensity UV photons. These photon energies do not match the bandgap of the semiconductor materials, which not only degrades the dye and electrolyte but also disrupts the electron kinetics. In this work, graphene oxide (GO) was incorporated into TiO 2 to form a composite photoanode structure. The results indicated that a composite photoanode based on GO/TiO 2 enhanced the power conversion efficiency of a solid-state dye-sensitized solar cell (ss-DSSC) by 62% compared to that of pure TiO 2. This enhancement is attributed to the high conductivity of graphene oxide. Further improvement in device performance was obtained by plasmonic luminescent down-shifting (LDS), where the UV region of the solar spectrum is shifted hundreds of nanometers. The multifunctional LDS coating layer was fabricated with a composite of ZnSe quantum dots and Ag nanoparticles. The experimental results demonstrated the ability of LDS to absorb photons at wavelengths below 400 nm and re-emit them at longer wavelengths (above 400 nm), where the cell has better photovoltaic response. When compared to a bare ss-DSSC, the power conversion efficiency (PCE) is enhanced by 37.62% for cells with a Ag/ZnSe coating layer. Moreover, the LDS-coated device exhibits 16.45% increased photon-to-current conversion efficiency compared to the LDS-free device for wavelengths lower than 500 nm. The 240-h aging tests confirmed that the LDS-coated ss-DSSC retained $ 83% of its original PCE value. This potential LDS coating layer not only leads to excellent device stability but also improves the cell performance, which increases the market value of the ss-DSSCs.

Quantum dot (QD) sensitized solar cells based on Hierarchical TiO2 structure (HTS) consisting of spherical nano-urchins on transparent conductive fluorine doped tin oxide glass substrate is fabricated. The hierarchical TiO2 structure consisting of spherical nano-urchins on transparent conductive fluorine doped tin oxide glass substrate synthesized by hydrothermal route. The CdS quantum dots were grown by the successive ionic layer adsorption and reaction deposition method. The quantum dot sensitized solar cell based on the hierarchical TiO2 structure shows a current density JSC = 1.44 mA, VOC = 0.46 V, FF = 0.42 and η = 0.27%. The QD provide a high surface area and nano-urchins offer a highway for fast charge collection and multiple scattering centers within the photoelectrode.