In
order to enhance the photoelectric conversion efficiencies of
crystalline silicon (c-Si) solar cells, CsPbCl3 quantum
dots (QDs) codoped with Mn2+ and Er3+ (CsPbCl3:Mn2+, Er3+ QDs) were mixed with ethylene–(vinyl
acetate) (EVA) to form a film which was used as a luminescent down-shifting
(LDS) layer. The LDS layer effectively improved the low utilization
of near-ultraviolet light of c-Si solar cells. These CsPbCl3:Mn2+,Er3+ QDs were synthesized via a conventional
high-temperature injection method. Mn2+ is the luminescence
center, and the incorporation of Er3+ greatly enhances
the luminescence intensity of Mn2+. The absolute photoluminescence
quantum yield of the QDs dispersed in toluene reached 79.5% when the
QDs were synthesized under the optimum conditions, that is, an injection
temperature of 180 °C and Pb:Mn:Er preparation molar ratios of
6:4:4. The EVA film embedded with QDs at the optimum concentration
(0.9 wt %) was used as an LDS layer for c-Si solar module. The short-circuit
current (I
SC) and the photoelectric conversion
efficiency (η) were increased by 3.42% and 4.02%, respectively,
owing to the LDS layer. Moreover, a luminescent solar concentrator
(LSC) which was another application of luminescent materials was also
demonstrated. For LSC, the relative changes in I
SC and η by using the QDs-dispersed EVA film were +14.9%
and +18.0%, respectively. These results indicate a feasible application
of luminescent downshifting films in solar modules.