Recently, multivalued logic (MVL) circuits have attracted tremendous interest due to their ability to process more data by increasing the number of logic states rather than the integration density. Here, we fabricate logic circuits based on molybdenum telluride (MoTe2)/black phosphorus (BP) van der Waals heterojunctions with different structural phases of MoTe2. Owing to the different electrical properties of the 2H and mixed 2H +1T′ phases of MoTe2, tunable logic devices have been realized. A logic circuit based on a BP field-effect transistor (FET) and a BP/MoTe2 (2H + 1T′) heterojunction FET displays the characteristics of binary logic. However, a drain voltage-controlled transition from binary to ternary logic has been observed in BP FET- and BP/ MoTe2 (2H) heterojunction FET-based logic circuits. Also, a change from binary to ternary characteristics has been observed in BP/MoTe2 (2H)-based inverters at low temperature below 240 K. We believe that this work will stimulate the assessment of the structural phase transition in metal dichalcogenides toward advanced logic circuits and offer a pathway to substantialize the circuit standards for future MVL systems.

The recent discovery of magnetic van der Waals (vdW) materials provides a platform to answer fundamental questions on the two-dimensional (2D) limit of magnetic phenomena and applications. An important question in magnetism is the ultimate limit of the antiferromagnetic layer thickness in ferromagnetic (FM)/antiferromagnetic (AFM) heterostructures to observe the exchange bias (EB) effect, of which origin has been subject to a long-standing debate. Here, we report that the EB effect is maintained down to the atomic bilayer of AFM in the FM (Fe3GeTe2)/AFM (CrPS4) vdW heterostructure, but it vanishes at the single-layer limit. Given that CrPS4 is of A-type AFM and, thus, the bilayer is the smallest unit to form an AFM, this result clearly demonstrates the 2D limit of EB; only one unit of AFM ordering is sufficient for a finite EB effect. Moreover, the semiconducting property of AFM CrPS4 allows us to electrically control the exchange bias, providing an energy-efficient knob for spintronic devices.

Temperature-dependent electrical and magneto-transport measurements have been performed on devices comprised of few layer (4L) graphene grown directly on SiO2/Si substrates using a CVD method. Intrinsic energy band-gap of 4.6...

The mechanism responsible for the emission of clusters from heavy ion irradiated solids is proposed to be thermal spikes. Collision cascade-based theories describe atomic sputtering but cannot explain the consistently observed experimental evidence for significant cluster emission.Statistical thermodynamic arguments for thermal spikes are employed here for qualitative and quantitative estimation of the thermal spike-induced cluster emission from Si, Ge and ZnO. The evolving cascades and spikes in elemental and molecular semiconducting solids are shown to have fractal characteristics. Power law potential is used to calculate the fractal dimension. With the loss of recoiling particles' energy the successive branching ratios get smaller. The fractal dimension is shown to be dependent upon the exponent of the power law interatomic potential 𝐷𝐷 = 1 2𝑚𝑚 . Each irradiating ion has the probability of initiating a space-filling, multifractal thermal spike that may sublime a localized region near the surface by emitting clusters in relative ratios that depend upon the energies of formation of respective surface vacancies.

Molybdenum is nitrided by a 100-Hz pulsed DC glow discharge technique for various time durations and fill gas pressures to study the effects on the surface properties of molybdenum. X-ray diffractometry (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM) are used for the structural and morphological analysis of the nitrided layers. Vickers' microhardness tester is utilized to investigate surface microhardness. Phase analysis shows the formation of more molybdenum nitride molecules for longer nitriding durations at fill gas pressures of 2 mbar and 3 mbar (1 bar = 10 5 Pa). A considerable increase in surface microhardness (approximately by a factor of 2) is observed for longer duration (10 h) and 2-mbar pressure. Longer duration (10 h) and 2-mbar fill gas pressure favors the formation of homogeneous, smooth, hard layers by the incorporation of more nitrogen.