2021
DOI: 10.1039/d1cp03225a
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Asymmetric carrier transport and weak localization in few layer graphene grown directly on a dielectric substrate

Abstract: Temperature-dependent electrical and magneto-transport measurements have been performed on devices comprised of few layer (4L) graphene grown directly on SiO2/Si substrates using a CVD method. Intrinsic energy band-gap of 4.6...

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Cited by 6 publications
(4 citation statements)
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“…As a template for GaN growth, graphene was directly grown on a c-sapphire substrate by chemical vapor deposition to eliminate the graphene transfer process that inevitably introduces unwanted defects and residues. 28,29 The graphene-coated sapphire substrates were treated using oxygen plasma to enhance the nucleation of GaN on the surface of graphene (Figure 1a), 2,30 which we confirmed with Raman spectroscopy and an exfoliation test (Figure S1). To obtain high-quality GaN thin films with a smooth surface, we developed a three-step growth method that increases the GaN nucleation while preventing the deterioration of graphene.…”
Section: T H Imentioning
confidence: 99%
“…As a template for GaN growth, graphene was directly grown on a c-sapphire substrate by chemical vapor deposition to eliminate the graphene transfer process that inevitably introduces unwanted defects and residues. 28,29 The graphene-coated sapphire substrates were treated using oxygen plasma to enhance the nucleation of GaN on the surface of graphene (Figure 1a), 2,30 which we confirmed with Raman spectroscopy and an exfoliation test (Figure S1). To obtain high-quality GaN thin films with a smooth surface, we developed a three-step growth method that increases the GaN nucleation while preventing the deterioration of graphene.…”
Section: T H Imentioning
confidence: 99%
“…The gas pressure regulation in a circulating CVD system can thus be utilized to overcome the self-limiting growth . Not only on conventional metal catalysts but, by controlling the process parameters, graphene growth on other catalysts such as copper/nickel alloys, , dielectric substrates, like SiO 2 /Si, , and sapphire can also be modulated.…”
Section: Introductionmentioning
confidence: 99%
“…In this context, in situ growth of graphene on target substrates is proposed as a feasible solution. Various types of methods have been reported, including metal-catalyst-free growth, [14][15][16][17] plasma-assisted growth, [18][19][20] and metal-assisted growth. [21][22][23][24][25] However, two serious problems remain unsolved regarding in situ growth of graphene.…”
Section: Introductionmentioning
confidence: 99%