To ensure the secure transmission of data, cryptography is treated as the most effective solution. Cryptographic key is an important entity in this procedure.In general, randomly generated cryptographic key (of 256 bits) is difficult to remember. However, such a key needs to be stored in a protected place or transported through a shared communication line which, in fact, poses another threat to security. As an alternative, researchers advocate the generation of cryptographic key using the biometric traits of both sender and receiver during the sessions of communication, thus avoiding key storing and at the same time without compromising the strength in security. Nevertheless, the biometricbased cryptographic key generation possesses few concerns such as privacy of biometrics, sharing of biometric data between both communicating users (i.e., sender and receiver), and generating revocable key from irrevocable biometric.This work addresses the above-mentioned concerns.In this work, a framework for secure communication between two users using fingerprint based crypto-biometric system has been proposed. For this, Diffie-Hellman (DH) algorithm is used to generate public keys from private keys of both sender and receiver which are shared and further used to produce a symmetric cryptographic key at both ends. In this approach, revocable key for symmetric cryptography is generated from irrevocable fingerprint. The biomet- * ric data is neither stored nor shared which ensures the security of biometric data, and perfect forward secrecy is achieved using session keys. This work also ensures the long-term security of messages communicated between two users.Based on the experimental evaluation over four datasets of FVC2002 and NIST special database, the proposed framework is privacy-preserving and could be utilized onto real access control systems.

The non-toxic and stable chalcogenide perovskite BaZrS3 fulfills many key optoelectronic properties for a high-efficiency photovoltaic material. It has been shown to possess a direct band gap with a large absorption coefficient and good carrier mobility values. With a reported band gap of 1.7–1.8 eV, BaZrS3 is a good candidate for tandem solar cell materials; however, its band gap is significantly larger than the optimal value for a high-efficiency single-junction solar cell (∼1.3 eV, Shockley–Queisser limit)thus doping is required to lower the band gap. By combining first-principles calculations and machine learning algorithms, we are able to identify and predict the best dopants for the BaZrS3 perovskites for potential future photovoltaic devices with a band gap within the Shockley–Queisser limit. It is found that the Ca dopant at the Ba site or Ti dopant at the Zr site is the best candidate dopant. Based on this information, we report for the first time partial doping at the Ba site in BaZrS3 with Ca (i.e., Ba1–x Ca x ZrS3) and compare its photoluminescence with Ti-doped perovskites [i.e., Ba­(Zr1–x Ti x )­S3]. Synthesized (Ba,Ca)­ZrS3 perovskites show a reduction in the band gap from ∼1.75 to ∼1.26 eV with <2 atom % Ca doping. Our results indicate that for the purpose of band gap tuning for photovoltaic applications, Ca-doping at the Ba-site is superior to Ti-doping at the Zr-site reported previously.

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Driven by the cost and scarcity of Lithium resources, it is imperative to explore alternative battery chemistries such as those based on Aluminum (Al). One of the key challenges associated with the development of Al-ion batteries is the limited choice of cathode materials. In this work, we explore an open-tunnel framework-based oxide (Mo3VOx) as a cathode in an Al-ion battery. The orthorhombic phase of molybdenum vanadium oxide (o-MVO) has been tested previously in Al-ion batteries but has shown poor coulombic efficiency and rapid capacity fade. Our results for o-MVO are consistent with the literature. However, when we explored the trigonal polymorph of MVO (t-MVO), we observe stable cycling performance with much improved coulombic efficiency. At a charge–discharge rate of ~0.4C, a specific capacity of ~190 mAh g−1 was obtained, and at a higher rate of 1C, a specific capacity of ~116 mAh g−1 was achieved. We show that differences in synthesis conditions of t-MVO and o-MVO result in significantly higher residual moisture in o-MVO, which can explain its poor reversibility and coulombic efficiency due to undesirable water interactions with the ionic liquid electrolyte. We also highlight the working mechanism of MVO || AlCl3–[BMIm]Cl || Al to be different than reported previously.