Atomic layer-deposited (ALD) dielectric films on graphene usually show noncontinuous and rough morphology owing to the inert surface of graphene. Here, we demonstrate the deposition of thin and uniform ALD ZrO films with no seed layer on chemical vapor-deposited graphene functionalized by atmospheric oxygen plasma treatment. Transmission electron microscopy showed that the ALD ZrO films were highly crystalline, despite a low ALD temperature of 150 °C. The ALD ZrO film served as an effective passivation layer for graphene, which was shown by negative shifts in the Dirac voltage and the enhanced air stability of graphene field-effect transistors after ALD of ZrO. The ALD ZrO film on the functionalized graphene may find use in flexible graphene electronics and biosensors owing to its low process temperature and its capacity to improve device performance and stability.

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and 511.8 g m -2 in control, rye field and CMV field, respectively, on August 22. The suppressing effect of cover crops also observed in minor cereals. Plant height and dry weight of sorghum was reduced to 68.7% and 33.6% of handweeding, respectively, on August 5. The reduction was recovered to 82.7% and 55.6% of control, respectively, on August 26. In addition, heading date of minor cereals was delayed by 7 days with rye.

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