Next generation graphene-based electronics essentially need a dielectric layer with several requirements such as high flexibility, high transparency, and low process temperature. Here, we propose and investigate a flexible and transparent poly-4-vinylphenol and poly(melamine-co-formaldehyde) (PVP/PMF) insulating layer to achieve intrinsic graphene and an excellent gate dielectric layer at sub 200 °C. Chemical and electrical effects of PVP/PMF layer on graphene as well as its dielectric property are systematically investigated through various measurements by adjusting the ratio of PVP to PMF and annealing temperature. The optimized PVP/PMF insulating layer not only removes the native -OH functional groups which work as electron-withdrawing agents on graphene (Dirac point close to zero) but also shows an excellent dielectric property (low hysteresis voltage). Finally, a flexible, wearable, and transparent (95.8%) graphene transistor with Dirac point close to zero is demonstrated on polyethylene terephthalate (PET) substrate by exploiting PVP/PMF layer which can be scaled down to 20 nm.

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In this letter, we investigate the impact of the thermal recovery (annealing) process on the electrical characteristics and the stability of IGZO TFTs in terms of: 1) vertical/lateral diffusion of Ti atoms into the IGZO channel region from the source/drain electrode and 2) recovery or local rearrangement of ions in IGZO. Although low thermal recovery temperatures <300°C are required to avoid the Ti diffusion that degrades IGZO TFT electrical characteristics, the TFT devices fabricated below 300°C becomes very unstable in gate/drain electricalstresses as a tradeoff.Index Terms-IGZO, TFT, stability, short channel effect, Ti diffusion, and gate/drain-stress.